Spin Element Diffusion Barrier for Wiring Stability
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Solution Overview
Problem
The material mismatch between the wiring and the spin element in spin-based memory technologies leads to potential diffusion issues and deterioration at connection points, affecting the reliability of the wiring.
Innovation Solution
A spin element design incorporating a laminate structure with a ferromagnetic layer and intermediate layers that reduce diffusion between different material elements, including specific elements like Au, Hf, Mo, Pt, W, and Ta, and conductive parts like Co, Al, Ag, and Cu, to minimize elemental diffusion and enhance wiring stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different materials are used for the wiring and spin element to optimize performance, then the functionality and efficiency are improved, but element diffusion occurs at the connection interface causing wiring deterioration
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between the wiring and the spin element (magnetoresistive element). This barrier layer prevents direct contact between dissimilar materials, blocking element diffusion while maintaining electrical connectivity. The barrier layer acts as a mediator that allows the wiring and spin element to function with optimized materials without suffering from interfacial diffusion issues.
2Productivity
If heavy metal is used for wiring in spin orbit torque type magnetoresistance effect element to inject many spins, then spin injection efficiency is improved, but material compatibility issues arise with other wiring materials
Solution Approach 1:
The diffusion barrier layer serves as an intermediary that enables the use of heavy metal wiring for spin injection while maintaining compatibility with other wiring materials in the device. The barrier layer isolates the heavy metal wiring from other materials, preventing diffusion issues while allowing the heavy metal to perform its spin injection function effectively.
3Adaptability or versatility
If wiring material is changed to magnetic film for magnetic domain wall moving type element, then domain wall movement functionality is achieved, but potential concentration occurs at material connections
Solution Approach 1:
The diffusion barrier layer acts as an intermediary between the magnetic film wiring and other wiring materials, preventing potential concentration at the connection interface. By providing a transition layer with appropriate electrical properties, the barrier layer distributes potential more evenly while maintaining the magnetic domain wall movement functionality of the magnetic film wiring.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design effectively reduces the deterioration of the wiring by controlling elemental diffusion, thereby improving the reliability and longevity of the spin element and reservoir elements.
Implementation Method 1
a diffusion coefficient of a second element including the first intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element including the first conductive part with respect to the first element
Data Source
AI summary
A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.