Spin Hall Effect Layer Reduces Current for Magnetization Reversal
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Solution Overview
Problem
Existing spin logic devices face challenges due to complex structures and high power consumption, primarily because they rely on Oersted fields generated by currents to reverse magnetization, leading to inefficiencies in manufacturing and practical application.
Innovation Solution
The integration of a Spin Hall effect (SHE) layer with a magnetic tunnel junction, where in-plane input currents generate a spin-polarized current that, combined with an Oersted field, reduces the overall current required to reverse magnetization, simplifying the structure and enhancing operational flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If Oersted field generated by current is used to reverse magnetization, then magnetization reversal is achieved, but power consumption increases and structure becomes complex
Solution Approach 1:
The patent introduces a Spin Hall effect layer as an intermediary component between the current input and the magnetic tunnel junction. This layer converts the charge current into a spin-polarized current that acts on the free magnetic layer, enabling magnetization reversal with lower power consumption and simplified structure compared to direct Oersted field generation
Solution Approach 2:
The patent replaces the Oersted field mechanism (electromagnetic field generation by current) with a Spin Hall effect mechanism (spin-polarized current generation). This substitution allows for more efficient magnetization reversal by utilizing spin transfer torque instead of requiring large currents to generate strong Oersted fields
2Reliability
If large current is used to generate strong Oersted field, then magnetization reversal is achieved, but power consumption increases
Solution Approach 1:
The patent changes the operational parameters by using spin-polarized current through the Spin Hall effect layer instead of large charge current. This parameter change enables reliable magnetization reversal at lower current densities, reducing power consumption while maintaining switching reliability
Solution Approach 2:
The Spin Hall effect layer serves as a mediator that amplifies the effect of the input current, converting it into a spin-polarized current with higher effectiveness for magnetization reversal. This intermediary mechanism achieves reliable switching without requiring large currents
3Adaptability or versatility
If multiple input lines are provided for logic operations, then logic functionality is achieved, but device structure becomes complex
Solution Approach 1:
The patent implements a universal logic operation mechanism where the Spin Hall effect layer and magnetic tunnel junction combination can perform multiple logic functions (AND, OR, NOT, NAND, NOR, XOR) by varying the magnetization states of the reference and free layers. This multi-functionality reduces the need for separate dedicated circuits for each logic operation, simplifying the overall device structure
Solution Approach 2:
The patent employs dynamic magnetization control where the magnetization directions of the free and reference layers can be dynamically adjusted to implement different logic operations. This dynamic reconfigurability allows a single device structure to perform multiple logic functions, reducing wiring complexity and improving adaptability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption and simplifies the device structure, enabling more efficient magnetization reversal and increased flexibility in logical operations, thereby enhancing the practicality of spin logic devices.
Implementation Method 1
a Spin Hall effect (SHE) layer formed of a conductive material exhibiting a spin Hall effect and configured to receive a first logic input current and a second logic input current both of which are in-plane currents
Implementation Method 2
a magnetic tunnel junction disposed on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer formed on the free magnetic layer, and a reference magnetic layer formed on the barrier layer
Data Source
AI summary
The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.