Spin-On Carbon Composition for Reflow-Controlled Crosslinking

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The challenge in semiconductor manufacturing is the reflow and uneven coverage of spin-on carbon (SOC) layers during thermal crosslinking, which can lead to damage to substrates and features during subsequent processing operations.

Innovation Solution

A two-step heating process is employed to thermally crosslink the SOC layer, where the first heating at a lower temperature partially crosslinks the layer, followed by a second heating at a higher temperature to fully crosslink it, reducing reflow and ensuring even coverage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single high-temperature heating process is used to crosslink the SOC layer, then crosslinking efficiency is improved, but SOC layer reflow occurs causing uneven coverage and substrate damage

Engineering Contradiction:
Improvecrosslinking efficiencyVSAvoidSOC layer coverage uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The single high-temperature heating process is segmented into two distinct heating stages: a first heating process at a lower temperature range and a second heating process at a higher temperature range. This segmentation allows the SOC layer to be gradually crosslinked without excessive reflow, maintaining coverage uniformity while achieving complete crosslinking. The first heating process partially crosslinks the SOC layer with minimal reflow, and the second heating process completes the crosslinking with controlled reflow.

Inventive Principle:
Principle #1Segmentation

2Productivity

If heating temperature is increased to accelerate crosslinking, then processing speed is improved, but SOC layer reflow increases causing substrate damage

Engineering Contradiction:
Improvecrosslinking speedVSAvoidsubstrate damage from reflow
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The first heating process serves as a preliminary action that partially crosslinks the SOC layer before the second high-temperature heating process. This preliminary crosslinking creates a more stable SOC layer structure that resists reflow during the subsequent high-temperature heating, enabling faster processing without substrate damage. The preliminary action of partial crosslinking prepares the SOC layer to withstand the harsher conditions of the second heating process.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If heating temperature is increased to ensure complete crosslinking, then crosslinking completeness is improved, but SOC layer reflow causes uneven thickness

Engineering Contradiction:
Improvecrosslinking completenessVSAvoidSOC layer thickness uniformity
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The heating process is segmented into two stages with different temperature ranges: the first heating process at a lower temperature (e.g., 200-300°C) maintains SOC layer thickness uniformity by minimizing reflow, while the second heating process at a higher temperature (e.g., 300-450°C) ensures complete crosslinking. The segmentation allows each heating stage to optimize for its specific purpose without compromising the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The heating temperature parameter is changed between two distinct ranges in sequence. The first heating process uses a moderate temperature parameter that balances crosslinking with reflow control, while the second heating process uses a higher temperature parameter optimized for complete crosslinking. This parameter change strategy allows the process to achieve both uniform thickness and complete crosslinking by adapting the temperature parameter to the specific requirements of each heating stage.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively inhibits SOC layer reflow, preventing substrate damage and ensuring consistent coverage, thereby improving the reliability and precision of semiconductor manufacturing processes.

Implementation Method 1

The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer.

Methodology Applied
Scientific EffectThermal crosslinking: Heat Treatment

Data Source

PatentUS12148610B2Spin on carbon composition and method of manufacturing a semiconductor device
Publication Date: 2024.11.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12148610B2 patent drawing
  • US12148610B2 patent drawing
  • US12148610B2 patent drawing

AI summary

A composition, comprising: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker partially crosslinks the carbon backbone polymer at a temperature ranging from 100° C. to 170° C., and the second crosslinker crosslinks the carbon backbone polymer at a temperature ranging from 180° C. to 300° C. The first crosslinker is one or more selected from the group consisting of A-(OR)x, A-(NR)x,where A is a monomer, oligomer, or a second polymer having a molecular weight ranging from 100 to 20,000, R is an alkyl group, cycloalkyl group, cycloalkylepoxy group, or C3-C15 heterocyclic group, OR is an alkyloxy group, cycloalkyloxy group, carbonate group, alkylcarbonate group, alkyl carboxylate group, tosylate group, or mesylate group, NR is an alkylamide group or an alkylamino group, and x ranges from 2 to 1000. The second crosslinker is different from the first crosslinker.