Spin-On Carbon Film Densification for Low-Temperature Etch Resistance
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming a spin-on carbon (SOC) film with high etch resistance at lower temperatures due to insufficient densification, which can lead to expansion of hole patterns during silicon oxide etching.
Innovation Solution
A carbon film formation method involving spin coating, low-temperature heating and firing, followed by helium ion irradiation to densify the SOC film, optimizing parameters such as bias power, internal pressure, temperature, and ion irradiation time to enhance etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If spin-on carbon film is formed by conventional spin coating and baking, then the film can be applied onto substrate, but the etch resistance is insufficient leading to hole pattern expansion during etching
Solution Approach 1:
The patent applies preliminary low-temperature firing treatment to the carbon-containing film before etching to densify the film structure and improve etch resistance. This preliminary densification action prevents hole pattern expansion during subsequent etching processes, resolving the contradiction between etch resistance and dimensional stability.
Solution Approach 2:
The patent changes the physical and chemical parameters of the carbon-containing film through controlled low-temperature firing (e.g., 200-400°C) to transform the film structure from loose to dense. This parameter change in film density directly improves etch resistance while maintaining manufacturing precision, preventing hole pattern expansion.
2Reliability
If high temperature firing is used to densify the carbon-containing film, then etch resistance improves, but processing temperature increases beyond low-temperature requirements
Solution Approach 1:
The patent changes the firing temperature parameter from conventional high temperatures to low temperatures (200-400°C range), combined with extended firing time and controlled atmosphere, to achieve sufficient film densification. This parameter optimization allows improving etch resistance while maintaining low-temperature processing requirements.
Solution Approach 2:
The patent employs periodic or extended firing treatment at low temperatures to achieve cumulative densification effect. By maintaining low-temperature firing for sufficient duration, the film structure progressively densifies to improve etch resistance without exceeding temperature constraints.
3Temperature
If the carbon-containing film is not sufficiently densified, then low-temperature processing is maintained, but etch resistance remains insufficient causing pattern expansion
Solution Approach 1:
The patent applies preliminary low-temperature firing treatment to the carbon-containing film before etching to densify the film structure and improve etch resistance. This preliminary densification action prevents hole pattern expansion during subsequent etching processes, resolving the contradiction between etch resistance and dimensional stability.
Solution Approach 2:
The patent dynamically optimizes the combination of firing temperature, time, and atmosphere parameters to achieve sufficient film densification at low temperatures. By adjusting these dynamic parameters, the film structure transforms from loose to dense, improving etch resistance while maintaining low-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves an SOC film with improved etch resistance comparable to or exceeding that of amorphous carbon films, while maintaining low-temperature processing requirements, reducing etching rates and promoting densification.
Implementation Method 1
heating and firing the carbon-containing film to form a carbon film
Implementation Method 2
irradiating the carbon film with helium ions
Data Source
AI summary
A carbon film formation method includes applying a carbon film raw material onto a substrate using a spin coating method to form a carbon-containing film on the substrate, and heating and firing the carbon-containing film to form a carbon film, and irradiating the carbon film with helium ions.