Spin-On Hardmask Composition for Etch Resistance and Planarization
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Solution Overview
Problem
In the semiconductor industry, forming fine patterns with excellent profiles is challenging due to limitations in lithographic techniques, particularly in achieving sufficient etch resistance and planarization with hardmask layers, especially when using spin-coating methods which compromise etch resistance compared to chemical or physical deposition methods.
Innovation Solution
A hardmask composition including a compound represented by Chemical Formula 1, with specific aromatic hydrocarbon groups and solubility-enhancing substituents, is used to form a hardmask layer through heat-treatment, providing excellent etch resistance and solubility for effective spin-on coating and curing into a high molecular weight polymer with improved crosslinking characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If spin-coating method is used to form hardmask layer, then ease of manufacture is improved, but etch resistance deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the hardmask layer by incorporating fluorinated cyclic carbonates with specific molecular structures (Formula 1) and controlling the ratio of cyclic carbonate to chain carbonate (1:4 to 4:1). This compositional parameter change enables the spin-coated layer to achieve etch resistance comparable to deposition methods while maintaining the ease of spin-coating application.
Solution Approach 2:
The patent creates a composite hardmask composition by combining fluorinated cyclic carbonate compounds with specific solvents (cyclohexanone, gamma-butyrolactone, NMP) and optional chain carbonates. This composite material system achieves both the solubility needed for spin-coating and the etch resistance required for fine pattern fabrication, resolving the contradiction between application ease and performance.
2Manufacturing precision
If hardmask layer is formed to improve etch resistance, then manufacturing precision is improved, but planarization deteriorates
Solution Approach 1:
The patent optimizes molecular weight parameters of the fluorinated cyclic carbonate (500-10,000 g/mol) and compositional ratios to achieve a balance between etch resistance and planarization. The specific molecular structure with controlled aromatic groups and fluorine substitution enables the material to provide sufficient etch resistance while maintaining good spin-coating uniformity and planarization characteristics.
3Reliability
If high molecular weight polymer is formed to improve crosslinking, then etch resistance is improved, but solubility deteriorates
Solution Approach 1:
The patent carefully controls the molecular weight parameter of the fluorinated cyclic carbonate within 500-10,000 g/mol and maintains specific functional group ratios (Formula 1) to optimize the balance between crosslinking density and solubility. This parameter optimization allows the polymer to form adequate crosslinked networks for etch resistance while remaining soluble in the specified solvents for effective spin-on coating application.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask layer exhibits superior heat resistance, etch resistance, and planarization characteristics, comparable to or exceeding those achieved with traditional deposition methods, while maintaining solubility for efficient application in the spin-on coating process.
Implementation Method 1
heat-treating the hardmask composition to form a hardmask layer
Implementation Method 2
heat-treating the hardmask composition to form a hardmask layer; forming a photoresist layer on the hardmask layer
Data Source
AI summary
A hardmask composition, including a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns using the hardmask layer including a cured product of the hardmask composition, the hardmask composition including a compound represented by Chemical Formula 1; and a solvent,