Spin-On Hardmask Composition for Semiconductor Fine Patterning
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Solution Overview
Problem
Conventional photolithography technologies are insufficient for forming fine patterns in highly integrated semiconductor devices, as they fail to achieve the desired profile and etching resistance required for advanced semiconductor manufacturing.
Innovation Solution
A method involving a hardmask composition comprising a carbon allotrope, a spin-on hardmask material, an aromatic ring-containing polymer, and a solvent is applied to an etching target layer, heat-treated to form a hardmask, and then used in conjunction with a photoresist pattern to etch the target layer, enhancing etching resistance and pattern formation capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography technologies are used, then the manufacturing process is simple, but fine patterns cannot be formed with desired profile and etching resistance
Solution Approach 1:
The patterning process is divided into multiple stages: first forming a hardmask layer with specific etching resistance, then forming a photoresist pattern on top, and finally performing etching. This segmentation allows each layer to perform its specific function optimally - the hardmask provides etching resistance while the photoresist provides pattern definition capability.
Solution Approach 2:
The hardmask layer is formed using a composite material system consisting of an organic compound layer (providing etching resistance) and a spin-on hardmask layer (providing patternability). This composite structure combines the advantages of both materials to achieve both fine pattern formation and sufficient etching resistance.
2Reliability
If a hardmask layer is formed to improve etching resistance, then etching resistance is enhanced, but the process complexity increases
Solution Approach 1:
The hardmask composition is designed to perform multiple functions simultaneously: the organic compound provides etching resistance while the spin-on hardmask component provides pattern definition capability. This multi-functionality reduces the need for separate specialized layers for each function.
Solution Approach 2:
The etching resistance is enhanced by changing the chemical composition parameters of the hardmask layer, specifically by incorporating organic compounds with high carbon content and optimizing the ratio of different components. This allows achieving high etching resistance through material composition rather than increasing layer thickness or adding more process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of fine patterns with improved etching resistance and reduced void defects, facilitating the creation of highly integrated semiconductor devices by combining the properties of carbon allotropes and spin-on hardmask materials.
Implementation Method 1
forming a hardmask by heat-treating the applied hardmask composition
Data Source
AI summary
A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.