Spin-Orbit Torque Element With Lattice Mismatch Layer
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Solution Overview
Problem
Current magnetization rotation technologies, such as TMR elements, face challenges in achieving efficient magnetization reversal with low switching current density, and the development of spin-orbit torque (SOT) for magnetization rotation is hindered by the need for external magnetic fields, requiring enhancement of SOT to facilitate easier magnetization reversal.
Innovation Solution
The introduction of an interfacial distortion supply layer with a degree of lattice mismatching between 5% and 10% with the spin-orbit torque wiring, which can be of various crystal structures, to induce internal distortion and enhance SOT, allowing for magnetization reversal with reduced current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If spin-orbit torque (SOT) is used for magnetization rotation, then energy efficiency is improved and service life is prolonged, but sufficient torque for magnetization reversal cannot be achieved without external magnetic fields
Solution Approach 1:
The patent changes the physical parameters of the spin-orbit torque wiring by introducing an interfacial distortion supply layer that creates lattice mismatch (5-10%). This distortion modifies the spin-orbit coupling strength and enhances the spin Hall angle, thereby increasing the SOT effect without requiring external magnetic fields. The parameter change in crystal structure directly amplifies the torque effect.
Solution Approach 2:
The patent creates a composite structure by bonding the spin-orbit torque wiring to an interfacial distortion supply layer with different crystal structure. This composite configuration leverages the lattice mismatch between the two materials to generate internal stress and enhance spin-orbit interaction, achieving stronger magnetization reversal torque while maintaining the energy efficiency benefits of SOT.
2Productivity
If larger spin-orbit torque is developed to achieve easier magnetization reversal, then magnetization rotation efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent segments the device into distinct functional layers: the spin-orbit torque wiring layer and the interfacial distortion supply layer. This segmentation allows independent optimization of each layer's properties - the wiring layer for spin current generation and the supply layer for distortion enhancement - thereby improving magnetization rotation efficiency while keeping the overall structure manageable through clear functional division.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient magnetization rotation of the ferromagnetic layer with a smaller reversal current density, improving the longevity and performance of spin-orbit torque magnetization rotational elements by increasing the spin Hall effect and injected spin, thus facilitating magnetization inversion.
Implementation Method 1
it is believed that the pure spin current caused by spin-orbital interaction or Rashba effect at the interface of dissimilar materials induces spin-orbit torque (SOT) for the magnetization rotation to occur
Implementation Method 2
it is believed that the pure spin current caused by spin-orbital interaction or Rashba effect at the interface of dissimilar materials induces spin-orbit torque (SOT) for the magnetization rotation to occur
Implementation Method 3
an interfacial distortion supply layer which is bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer and has a degree of lattice mismatching with the spin-orbit torque wiring of 5% or more and 10% or less
Data Source
AI summary
A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.