Spin-orbit-torque element with oxide interlayer for fast magnetization reversal
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Solution Overview
Problem
The mechanism for magnetization reversal in spin-orbit-torque magnetization rotational elements is not well understood, leading to challenges in quickly performing magnetization reversal, which can result in unreliable data writing and reduced device reliability due to low damping constants in ferromagnetic layers.
Innovation Solution
Incorporating an oxide containing layer between ferromagnetic layers in a spin-orbit-torque magnetization rotational element, where the oxide layer contains non-magnetic elements like Al, Si, or heavy metals, and has insufficient oxygen, to increase the damping constant and facilitate faster magnetization reversal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the damping constant of the ferromagnetic layer is decreased to enable magnetization reversal using spin transfer torque, then energy consumption is reduced and integration is improved, but erroneous writing may occur during reading and device reliability is lowered
Solution Approach 1:
The invention changes the damping constant parameter by introducing an oxide containing layer with specific properties (contains oxide of non-magnetic element, insufficient oxygen relative to stoichiometric composition) between the ferromagnetic layer and tunnel barrier layer. This allows the damping constant to be optimized for reliable operation while maintaining low energy consumption for magnetization reversal.
Solution Approach 2:
The invention uses a composite structure consisting of a ferromagnetic layer combined with an oxide containing layer (made of non-magnetic elements such as Al, Si, Mg, Ti, Cr, Cu, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Ir, Pt, or Bi). This composite structure achieves both low energy consumption and high reliability by controlling the damping constant through the oxide layer's presence.
2Power
If the damping constant of the ferromagnetic layer is decreased to facilitate magnetization reversal, then the critical writing current density is reduced, but the magnetic anisotropic energy also decreases making the magnetization more easily reversed and read
Solution Approach 1:
The oxide containing layer modifies the damping constant parameter to achieve an optimal balance: low enough to enable efficient magnetization reversal with acceptable current density, but high enough to provide sufficient magnetic anisotropic energy to prevent erroneous reading. The layer's composition (oxide of non-magnetic element with insufficient oxygen) is specifically designed to achieve this parameter optimization.
3Productivity
If a ferromagnetic layer with low damping constant is used to achieve energy saving and high integration, then the magnetization can be reversed more easily, but the device reliability is compromised due to potential erroneous writing
Solution Approach 1:
The invention employs a composite structure of ferromagnetic layer plus oxide containing layer to achieve both high integration density and high reliability. The oxide layer (containing oxide of non-magnetic element with insufficient oxygen) enables the use of thin ferromagnetic layers for high integration while maintaining adequate damping constant for reliable operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for quick magnetization reversal of the ferromagnetic layers, enhancing the reliability and efficiency of data writing in magnetic memory devices by increasing the damping constant and stabilizing the magnetization against thermal disturbances.
Implementation Method 1
The damping constant is a physical quantity generated from spin-orbit interaction. For that reason, the damping constant has a close relationship with the magnetic anisotropic energy.
Implementation Method 2
magnetization reversal using a pure spin current generated by spin-orbit interaction has been gaining attention as means for reducing a reversal current (for example, Non-Patent Document 2). The pure spin current generated by the spin-orbit interaction causes a spin-orbit-torque (SOT).
Data Source
AI summary
A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring; and a laminated body laminated on the spin-orbit-torque wiring, wherein the laminated body includes a first ferromagnetic layer, an oxide containing layer, and a second ferromagnetic layer in order from the spin-orbit-torque wiring, wherein the oxide containing layer contains an oxide of a non-magnetic element, and wherein the first ferromagnetic layer and the second ferromagnetic layer are ferromagnetically coupled to each other.


