Spin Orbit Torque Wiring Layer Heat Dissipation via Boron Nitride

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Magnetoresistance effect elements using spin orbit torque (SOT) face issues with heat dissipation, leading to potential disconnection of the spin orbit torque wiring layer and deterioration of characteristics due to high electric resistance and heat emission, which complicates magnetization reversal and stability.

Innovation Solution

A spin current magnetization reversing element is designed with a spin orbit torque wiring layer coated with a first insulating layer containing boron nitride or aluminum nitride for improved heat dissipation, along with a second insulating layer of silicon nitride, and optionally a heat-dissipating layer of metal nitride to manage heat effectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a spin orbit torque wiring layer is used to generate pure spin current for magnetization reversal, then magnetization reversal can be achieved without damaging the magnetoresistance effect element, but the wiring layer emits large amounts of heat due to high electric resistance, causing disconnection and deterioration of characteristics

Engineering Contradiction:
Improvemagnetization reversal without element damageVSAvoidheat emission from wiring layer
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent introduces a heat dissipation layer as an intermediary between the spin orbit torque wiring layer and the substrate. This mediator layer specifically addresses the heat emission problem by providing a thermal conduction path, allowing heat to be efficiently transferred away from the wiring layer without affecting the magnetization reversal function.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the thermal parameters of the system by introducing a layer with high thermal conductivity. This parameter change transforms the heat management approach, converting the wiring layer from a heat-emitting component to a heat-dissipating system where thermal energy is actively managed through the heat dissipation layer.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the spin orbit torque wiring layer is formed with long shape to extend in one direction, then it can generate pure spin current for magnetization reversal, but the long shape causes high electric resistance and large heat emission

Engineering Contradiction:
Improvepure spin current generationVSAvoidheat emission from wiring layer
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful heat emission into a manageable thermal conduction problem. By introducing the heat dissipation layer, the previously harmful heat is transformed into a controlled thermal flow that can be efficiently conducted away, turning a detrimental effect into a manageable parameter.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The heat dissipation layer serves as a mediator that separates the heat generation function (wiring layer) from the heat management function. This intermediary structure allows the wiring layer to maintain its long shape for effective spin current generation while the heat dissipation layer handles the thermal consequences.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If heat dissipation of the side wall of the ferromagnetic layer is increased using boron nitride, then heat emission is curtailed, but it is difficult to satisfactorily curb heat emission from the spin orbit torque wiring layer

Engineering Contradiction:
Improveheat emission curbingVSAvoidheat dissipation effectiveness
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent moves the heat dissipation function from a vertical dimension (side wall coating) to a horizontal dimension (intermediate layer). By placing the heat dissipation layer between the wiring layer and substrate, heat can be conducted away in the horizontal plane, providing an additional thermal management dimension that complements the side wall approach.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces an intermediate heat dissipation layer that acts as a dedicated thermal management component. This intermediary structure provides a specialized heat conduction path that is independent of the side wall heat dissipation, creating a multi-path thermal management system that is more effective than either approach alone.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration efficiently dissipates heat generated during current flow, preventing disconnection and deterioration of the spin orbit torque wiring layer, thereby enhancing the durability and performance of the magnetoresistance effect element and magnetic memory devices.

Implementation Method 1

a first insulating layer that is formed on a second surface on a side opposite to the first ferromagnetic layer side on the surface of the spin orbit torque wiring layer, and the first insulating layer contains boron nitride or aluminum nitride

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

it has been proposed that magnetization reversal using a pure spin current which is generated by spin orbit interaction is possible

Methodology Applied
Scientific EffectSpin orbit interaction:

Implementation Method 3

A pure spin current based on the spin orbit interaction induces a spin orbit torque (SOT) and causes magnetization reversal due to the SOT

Methodology Applied
Scientific EffectSpin orbit torque:

Implementation Method 4

reading and writing of data thereon can be performed using characteristics in which electric resistance varies depending on an angle formed by a magnetization direction of one ferromagnetic layer and a magnetization direction of the other ferromagnetic layer

Methodology Applied
Scientific EffectMagnetoresistance effect: Magnetoresistance

Data Source

PatentUS10943631B2Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
Publication Date: 2021.03.09 TDK CORP
  • US10943631B2 patent drawing
  • US10943631B2 patent drawing
  • US10943631B2 patent drawing

AI summary

A spin current magnetization reversing element (100) includes a spin orbit torque wiring layer (101) that extends in one direction, a first ferromagnetic layer (102) that is formed on a first surface (101a) of the spin orbit torque wiring layer, and a first insulating layer (103) that is formed on a second surface (101b) on a side opposite to the first ferromagnetic layer (102) side on the surface of the spin orbit torque wiring layer. The first insulating layer (103) contains boron nitride or aluminum nitride.