Spin-Seebeck Thermoelectric Stack for Heat Extraction
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Solution Overview
Problem
Current microelectronic devices face challenges in efficiently extracting heat and recovering power losses due to the limitations of conventional thermal management techniques, which result in reduced device efficiency and increased power dissipation per volume, especially as devices approach the limit on subthreshold swing.
Innovation Solution
Integration of a spin-Seebeck thermoelectric material stack comprising a spin-Seebeck insulator and a spin orbit coupling material into microelectronic devices and interconnects, leveraging the spin-Seebeck effect to convert waste heat into electrical energy, thereby providing electrical isolation and minimizing overhead in device footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal management techniques are used, then heat extraction is achieved, but device footprint overhead increases and electrical isolation requirements consume additional space
Solution Approach 1:
The patent merges the thermal management function with the electrical interconnect structure by integrating thermoelectric materials directly into the interconnect. This combination eliminates the need for separate thermal management components, thereby reducing device footprint while maintaining effective heat extraction capabilities.
Solution Approach 2:
The interconnect structure is designed to perform multiple functions simultaneously: electrical conduction, thermal conduction, and thermoelectric power generation. By making the interconnect multi-functional, the patent eliminates the need for dedicated thermal management components, thus reducing the overall device footprint.
2Temperature
If materials with good thermal conductivity are used for heat extraction, then heat extraction efficiency improves, but electrical conductivity also increases requiring additional electrical isolation
Solution Approach 1:
The patent combines the electrical interconnect and thermal management functions into a single integrated structure. The thermoelectric material layer is deposited directly on the interconnect, creating a unified component that handles both electrical and thermal functions, thereby eliminating the need for separate electrical isolation structures.
Solution Approach 2:
The thermoelectric material stack inherently provides both thermal conduction and electrical isolation through its layered structure. The spin-Seebeck insulator layer specifically addresses electrical isolation requirements while the entire stack maintains thermal conduction, allowing the structure to self-manage both requirements without additional components.
3Area of stationary object
If device scaling is pursued to increase density, then footprint is reduced, but power dissipation per volume increases
Solution Approach 1:
The patent converts the harmful waste heat generated by power dissipation into useful electrical energy through the thermoelectric effect. The thermoelectric material stack captures the temperature gradient created by power dissipation and converts it into electrical power, thereby transforming energy loss into energy recovery and improving overall device efficiency.
Solution Approach 2:
The thermoelectric power generation creates a feedback mechanism where the power dissipation that would normally be wasted is instead converted back into useful electrical energy. This feedback loop recovers energy at the device level, counteracting the increased power dissipation density resulting from device scaling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively converts waste heat into electrical energy, improving the efficiency of microelectronic devices and interconnects while maintaining minimal overhead, thus addressing the challenges of heat extraction and power recovery.
Implementation Method 1
leveraging the spin-Seebeck effect to convert waste heat into electrical energy
Implementation Method 2
a spin orbit coupling material into microelectronic devices and interconnects, leveraging the spin-Seebeck effect
Data Source
AI summary
Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.