Spin Transistor Gate Control of Spin-Polarized Electron Flow
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Solution Overview
Problem
As semiconductor devices are miniaturized, carrier mobility does not keep pace with size reduction, and power requirements are not adequately decreased, necessitating the exploration of alternative technologies like spin transistors that utilize electron spin for efficient operation.
Innovation Solution
A spin transistor design featuring a channel made of magnetic material, a source and drain with ferromagnetic layers, and a gate electrode that controls magnetization to selectively pass spin-polarized electrons, utilizing electric and magnetic fields to manage electron flow through tunnel barriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are miniaturized to nanoscale, then device size is reduced, but carrier mobility does not keep pace with size reduction and power requirements are not adequately decreased
Solution Approach 1:
The patent replaces conventional charge-based transistor operation with spin-based electron transport. Instead of relying on charge carrier mobility through electric fields, the invention uses spin-polarized electron injection and spin-dependent transport through magnetic tunnel junctions, substituting mechanical charge movement with quantum spin effects to achieve size-independent performance
Solution Approach 2:
The invention changes the fundamental operating parameter from charge to spin. By utilizing spin-polarized electrons and magnetic moment orientation rather than charge carrier concentration and mobility, the device performance becomes independent of physical dimensions, allowing nanoscale miniaturization without performance degradation
2Volume of moving object
If semiconductor devices are miniaturized, then device size is reduced, but power requirements are not adequately decreased
Solution Approach 1:
The patent substitutes charge-based current flow with spin-based electron transport. The spin transistor uses spin-polarized electron injection from a ferromagnetic source through a non-magnetic channel to a magnetic drain, where current is modulated by spin-dependent tunneling rather than charge accumulation, dramatically reducing power consumption at nanoscale dimensions
Solution Approach 2:
The invention employs periodic switching of magnetization states in the drain layer through applied magnetic fields or spin-transfer torque. This periodic reorientation of magnetic moments creates on/off states for spin-polarized electron transport, enabling low-power switching without continuous power consumption
3Ease of operation
If conventional transistors are used, then device operation is simple, but switching speed is limited and power consumption is high
Solution Approach 1:
The patent changes the control mechanism from electric field modulation of charge carriers to magnetic field or spin-transfer torque control of magnetization states. The gate electrode applies voltage to control the magnetization orientation of the drain layer, switching spin-polarized electron transport on and off at high speeds while maintaining operational simplicity through voltage control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances charge mobility and reduces power consumption, enabling the creation of smaller, more efficient transistors by selectively passing spin-polarized electrons based on magnetization states and field controls.
Implementation Method 1
The channel may be controlled by using an electric field generated due to a voltage applied to the gate electrode in order to control the passing of the spin-polarized electron injected from the source
Implementation Method 2
The channel may be controlled by using a magnetic field generated due to a current flowing through the gate electrode in order to control the passing of the spin-polarized electron injected from the source
Implementation Method 3
A tunnel barrier may be disposed at least one selected from between the channel and the source and between the channel and the drain
Implementation Method 4
The source may comprise a ferromagnetic layer disposed on the first tunnel barrier and a metal layer disposed on the ferromagnetic layer. The source may further comprise a anti-ferromagnetic layer formed between the ferromagnetic layer and the metal layer
Implementation Method 5
a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction
Data Source
AI summary
Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.