Spin Valve Built-In Electric Field Self-Driven Operation
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Solution Overview
Problem
Traditional spintronic devices require external biasing electric fields for operation, which is disadvantageous for devices operating in harsh environments and results in high power consumption.
Innovation Solution
A self-driven spin valve with a built-in electric field is developed, comprising multiple magnetic layers and nonmagnetic semiconductor layers to form a built-in electric field, allowing the device to operate without external biasing, using semiconductor materials with varying conductivities and pinning layers to control magnetization directions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional spin valves use external biasing electric fields for operation, then the device can function properly, but power consumption increases and reliability in harsh environments decreases
Solution Approach 1:
The spin valve device generates its own built-in electric field through the nonmagnetic semiconductor layers with different conductivities, eliminating the need for external biasing power supplies. The device serves itself by creating the necessary electric field internally through material properties rather than external sources, thereby reducing power consumption and improving reliability in harsh environments where external power may be unavailable or unreliable
Solution Approach 2:
The patent changes the conductivity parameter of the semiconductor layers to create different charge carrier concentrations, which generates the built-in electric field. By modifying the electrical parameters of the semiconductor materials (using layers with different conductivities), the device creates an internal electric field that replaces the need for external biasing, thereby resolving the contradiction between power consumption and operational reliability
2Use of energy by moving object
If nonmagnetic semiconductor layers with different conductivities are introduced to form built-in electric field, then power consumption is reduced, but device structure becomes more complex
Solution Approach 1:
The patent uses composite material structures by combining magnetic layers with nonmagnetic semiconductor layers of different conductivities. This composite approach allows the device to generate built-in electric fields through the inherent properties of the semiconductor materials, achieving low power consumption while maintaining a relatively simple layered structure that integrates naturally with spin valve architectures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables low or zero power consumption and stable performance in harsh environments, enhancing the spin effect and expanding applications in magnetic sensing and data storage technologies.
Implementation Method 1
a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers
Implementation Method 2
the at least one pair of nonmagnetic semiconductor layers may be made of semiconductor materials with a same conductivity but different carrier concentrations
Implementation Method 3
The principle of a spin valve is to induce a magnetoresistance effect by controlling magnetization directions of magnetic layers to have a parallel and antiparallel configuration
Implementation Method 4
controlled magnetization directions of magnetic layers to have a parallel and antiparallel configuration
Implementation Method 5
at least one of the two or more magnetic layers may have a fixed magnetization direction, and the other magnetic layers have an unfixed magnetization direction
Data Source
AI summary
Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valve may comprise two or more magnetic layers stacked in sequence, wherein the spin valve further comprises at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers.