Spinel Oxide Semiconductor for pH Sensors

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Solution Overview

Problem

Conventional semiconductor materials like amorphous and crystalline oxides, such as IGZO, exhibit insufficient resistance to strong acids and bases, requiring protective layers that complicate manufacturing and reduce sensitivity in pH sensors and biosensors.

Innovation Solution

A semiconductor device with a spinel-type oxide semiconductor layer containing zinc (Zn) and gallium (Ga), which provides high stability against strong acids and bases, eliminating the need for protective layers and enabling high-speed, sensitive measurements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor materials like IGZO are used, then the device can be manufactured with standard processes, but the chemical durability is insufficient requiring protective layers

Engineering Contradiction:

Improvechemical durabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the material parameters by using spinel-type oxide (ZnGa2O4) instead of conventional IGZO, achieving high chemical durability and etching resistance while maintaining semiconductor functionality, thereby eliminating the need for protective layers

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite oxide material combining zinc oxide and gallium oxide in a spinel structure, which provides both chemical stability and semiconductor properties, replacing the need for separate protective layer structures

Inventive Principle:

Principle #40Composite materials

2Reliability

If protective layers are added to protect semiconductor material from chemical damage, then chemical durability is improved, but manufacturing complexity increases and sensitivity is reduced

Engineering Contradiction:

Improvechemical durabilityVSAvoidmanufacturing simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the protective layer component from the device structure by using a semiconductor material that inherently possesses the required chemical durability and etching resistance, simplifying the manufacturing process

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The spinel-type oxide semiconductor layer serves its own protective function by providing inherent resistance to acids and bases, eliminating the need for separate protective layers and reducing manufacturing steps

Inventive Principle:

Principle #25Self-service

3Reliability

If protective layers are added to protect semiconductor material, then chemical durability is improved, but sensor sensitivity is reduced

Engineering Contradiction:

Improvechemical durabilityVSAvoidsensor sensitivity

Core Design Contradiction:

ReliabilityVSMeasurement precision

Solution Approach 1:

The patent removes the protective layer that acted as a barrier between the semiconductor material and the measured substance, allowing direct contact and high-speed response while maintaining chemical durability through the inherent stability of spinel-type oxide

Inventive Principle:

Principle #2Taking out (Extraction)

Data Source

PatentUS10749035B2Semiconductor device, pH sensor, biosensor, and manufacturing method for semiconductor device

Publication Date: 2020.08.18 NIKON CORP

AI summary

There is provided a semiconductor device including: a first electrode; a second electrode; and a semiconductor layer in contact with the first electrode and the second electrode, in which the semiconductor layer is a spinel-type oxide containing zinc (Zn) and gallium (Ga).