Spinel Oxide Protective Layer for Low-Temperature Organic Semiconductors
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Solution Overview
Problem
Existing semiconductor devices face challenges with high film-formation temperatures, slow speeds, and impurity introduction from conventional metal oxide films, particularly when using chemical vapor deposition or reactive sputtering methods, which affect the efficiency and integrity of the protective layer.
Innovation Solution
Employing a spinel oxide as the protective layer, which can be efficiently formed at lower temperatures and faster speeds using sputtering, thereby reducing impurity introduction, especially hydrogen, and providing enhanced passivation effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal oxide films (SiO2, Al2O3) are used as protective layers formed by chemical vapor deposition or reactive sputtering, then the protective layer provides passivation effect, but the film-formation temperature is high and the formation speed is slow
Solution Approach 1:
The patent changes the material composition parameter from conventional metal oxides (SiO2, Al2O3) to spinel oxide, which fundamentally alters the film formation characteristics. This material substitution enables lower temperature processing and faster deposition rates while maintaining the required passivation performance, directly resolving the contradiction between reliability and productivity
2Reliability
If chemical vapor deposition or reactive sputtering methods are used to form protective layers, then the protective layer can be formed, but impurities (especially hydrogen) are introduced during the process
Solution Approach 1:
The patent employs sputtering method which operates in a more controlled inert environment compared to chemical vapor deposition. The spinel oxide formation process introduces fewer impurities, particularly hydrogen, by using a physical deposition mechanism rather than chemical reactions that occur in CVD, thereby reducing harmful factor introduction while maintaining protective layer integrity
3Reliability
If conventional metal oxide films are used as protective layers, then the protective function is provided, but the manufacturing process is complex and time-consuming
Solution Approach 1:
The patent simplifies the manufacturing process by changing the material parameter to spinel oxide, which can be deposited at lower temperatures and faster rates. This reduces the overall process complexity and manufacturing time while maintaining the essential protective function, effectively resolving the contradiction between reliability and device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of spinel oxide as a protective layer results in improved semiconductor properties, including reduced impurity content, faster film formation, and enhanced stability against strong acids and bases, enabling efficient and accurate sensor operations.
Implementation Method 1
forming the protective layer by performing sputtering
Data Source
AI summary
Provided is a semiconductor device A including: a first electrode 10; a second electrode 20; a semiconductor layer 30 in contact with the first electrode 10 and the second electrode 20; and a protective layer 40 configured to cover at least a part of a surface of the semiconductor layer 30, wherein the protective layer 40 includes a spinel oxide.