Spinning Disk Electrostatic Clamping for Ion Implantation Angular Uniformity
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Solution Overview
Problem
Conventional high energy implantation systems for semiconductor devices face issues with non-uniform angular spread due to electrostatic scanning, which affects the precision of deep implanted regions in devices like insulated gate bipolar transistors (IGBTs).
Innovation Solution
A semiconductor processing system utilizing a spinning disk with electrostatically clamped platens, where a central hub provides rotational control and electrostatic clamping voltages to multiple platens, allowing for precise high energy ion implantation with reduced angular spread by directing a spot ion beam to workpieces on the spinning disk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If electrostatic scanning is used to create a ribbon ion beam, then the implantation system can process workpieces, but non-uniformities in angular spread are exacerbated
Solution Approach 1:
The patent extracts the electrostatic scanning function from the beam path and replaces it with a mechanical scanning approach. The spot ion beam is directly directed at workpieces mounted on a spinning disk, eliminating the electrostatic scanner that was causing angular spread non-uniformities. This separates the scanning function from the beam generation, allowing precise angular control through mechanical rotation.
Solution Approach 2:
The patent replaces the electrostatic scanning system with a mechanical scanning system. Instead of using electric fields to deflect and scan the ion beam, the system uses a physically spinning disk with workpieces mounted on it. This mechanical substitution eliminates the angular spread issues caused by electrostatic scanning while maintaining the ability to process multiple workpieces.
2Strength
If high energy implants are used to create deep implanted regions, then device power ratings can be increased, but angular spread non-uniformities affect implantation precision
Solution Approach 1:
The patent replaces electrostatic beam scanning with mechanical disk rotation to maintain precise angular control during high energy implantation. The spinning disk mechanically positions workpieces at precise angles relative to the spot ion beam, ensuring uniform angular spread even when using the high energies needed for deep implanted regions and high power ratings.
3Manufacturing precision
If a spot ion beam is used instead of electrostatic scanning, then angular spread uniformity is improved, but batch processing capability must be implemented through spinning disk
Solution Approach 1:
The patent merges multiple workpiece processing into a single spinning disk system. Multiple workpieces are mounted on the disk, and the spot ion beam processes them sequentially as the disk rotates. This combines the precision of spot beam imaging with batch processing capability, improving angular spread uniformity while enabling efficient multi-workpiece fabrication.
Solution Approach 2:
The patent introduces dynamic rotation of the workpiece holder (spinning disk) to enable batch processing with a spot ion beam. The disk rotates to bring different workpieces into the beam path sequentially, transforming a static single-workpiece system into a dynamic multi-workpiece system that maintains precise angular control throughout the rotation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This system enables high energy ion implantation with improved uniformity and flexibility in angular control, enhancing the precision of semiconductor device fabrication by minimizing non-uniformities in angular spread and allowing for batch processing of workpieces.
Implementation Method 1
The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens.
Implementation Method 2
The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk
Implementation Method 3
a spot beam is generated, which is then electrostatically scanned to create a ribbon ion beam that strikes the workpiece
Data Source
AI summary
A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.