Spintronics Element Protection Layer for MgO Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
MgO tunnel insulating films in spintronics elements degrade due to reactions with CO2 and H2O when exposed to the atmosphere, leading to alterations in their characteristics, which affects the reliability and performance of these elements.
Innovation Solution
A protection layer, such as a CoFeB layer, is applied directly on the non-magnetic uppermost layer, specifically the MgO layer, to prevent degradation by forming a barrier that maintains the characteristics even when exposed to atmospheres with a partial pressure of H2O equal to or greater than 10^-4 Pa.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the MgO layer is exposed to the atmosphere during manufacturing and inspection, then manufacturing and inspection processes can be performed, but the MgO layer characteristics alter and degrade due to reactions with H2O and CO2
Solution Approach 1:
A protection layer is introduced as an intermediary between the MgO layer and the atmosphere. This protection layer prevents direct contact between the MgO layer and harmful atmospheric components (H2O and CO2), thereby maintaining the MgO layer's characteristics while allowing the wafer to be exposed to the atmosphere for manufacturing and inspection processes.
Solution Approach 2:
The protection layer creates an inert environment around the MgO layer by forming a barrier that excludes reactive atmospheric components. This inert environment prevents chemical reactions between the MgO layer and H2O/CO2, ensuring characteristic stability during atmospheric exposure.
2Reliability
If the MgO layer is protected from atmospheric exposure, then characteristic stability is maintained, but manufacturing and inspection processes become difficult
Solution Approach 1:
The protection layer serves as a mediator that enables atmospheric exposure while protecting the MgO layer. It allows manufacturing and inspection processes to access the wafer surface without compromising the MgO layer's characteristics, as the protection layer can be applied and removed or is transparent to the necessary processes.
3Reliability
If a protection layer is applied on the MgO layer, then characteristic alteration is prevented, but device structure becomes more complex
Solution Approach 1:
The protection layer is designed as a temporary, disposable component that is applied only during atmospheric exposure periods (manufacturing and inspection). It can be a thin, simple layer that serves its protective function and is then removed or left as a non-critical layer, minimizing the increase in device complexity while effectively preventing characteristic alteration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protection layer effectively prevents the alteration and degradation of the MgO layer's characteristics, ensuring the spintronics elements maintain their performance during exposure to humid or CO2-rich environments, allowing for reliable manufacturing and inspection processes.
Implementation Method 1
forming a plurality of laminated layers including a substrate, a ferromagnetic layer, a non-magnetic layer, and a protection layer. The protection layer directly contacts the non-magnetic uppermost layer and prevents alteration of characteristics of the uppermost layer.
Data Source
AI summary
A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10−4 Pa, no other layer being directly formed on the protection layer.