Spiral Double-Surround Capacitor Layout for Higher On-Chip Capacitance

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Solution Overview

Problem

Integrated chips face challenges in maximizing capacitance within a limited layout area due to the conventional design of capacitors, which restricts their functional capabilities in analog and digital circuitry.

Innovation Solution

The implementation of a double surround capacitor structure with spiral or polygonal patterns for the electrodes, where the first and second electrodes are not directly connected but surround each other, increasing the effective area and capacitance value without increasing the layout area, by using a dielectric material between them.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional capacitor design is used, then layout area is kept simple, but capacitance value is limited and cannot be maximized

Engineering Contradiction:
Improvecapacitance valueVSAvoidlayout area
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent implements a double surround capacitor structure where a first electrode and a second electrode are nested within each other in a planar configuration. The first electrode extends from a first end to a second end, while the second electrode extends from a second end to a third end, with both electrodes surrounded by a common electrode. This nested arrangement maximizes the effective overlapping area between electrodes, thereby increasing capacitance value without requiring additional layout area.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent transitions from traditional three-dimensional vertical capacitor structures to a planar two-dimensional configuration. By arranging electrodes in a flat, nested pattern on the same plane rather than stacking them vertically, the design achieves higher capacitance density within the constrained layout area, effectively utilizing the planar dimension to maximize electrode overlap.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If electrode area is increased to boost capacitance, then capacitance value improves, but layout area consumption increases

Engineering Contradiction:
Improvecapacitance valueVSAvoidelectrode area
Core Design Contradiction:
Quantity of substanceVSArea of moving object

Solution Approach 1:

The nested electrode configuration allows multiple electrodes to occupy the same spatial footprint by arranging them concentrically or in overlapping patterns. The first electrode, second electrode, and common electrode are positioned such that they nest within each other's boundaries, effectively multiplying the functional electrode area without proportionally increasing the physical layout area.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent employs spiral or polygonal patterns for the electrode layouts instead of simple linear or rectangular configurations. These curved and geometric patterns allow the electrodes to pack more efficiently within the available area, increasing the effective overlapping length and area between electrodes while maintaining compact boundaries.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances capacitance values within the same layout area, enabling improved performance in integrated circuits by optimizing space utilization and capacitance, thus supporting more complex circuit functionalities.

Implementation Method 1

a first capacitor and a second capacitor, each including the first electrode, the second electrode, and the dielectric material between the first electrode and the second electrode

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a dielectric material between them

Methodology Applied
Scientific EffectDielectric: Dielectric

Data Source

PatentUS12009388B2Semiconductor device and manufacturing method thereof
Publication Date: 2024.06.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12009388B2 patent drawing
  • US12009388B2 patent drawing
  • US12009388B2 patent drawing

AI summary

A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.