Spiral Series Diode Layout for Compact Low-Power Voltage Division
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Solution Overview
Problem
Semiconductor devices with embedded resistor voltage dividers face issues of increased area requirements and resistance variations due to high impurity dosage, leading to high power consumption and complex circuit configurations.
Innovation Solution
A semiconductor device with a thin film resistive element formed on a semiconductor substrate, featuring a series of diodes connected in a spiral shape and a resistor voltage divider, which reduces power consumption by optimizing the impurity dosage and area usage, while maintaining high breakdown voltage capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the resistance of the resistor voltage divider is increased to reduce power consumption, then power consumption is reduced, but the area of the start-up terminal is enlarged to secure the length of the resistive element
Solution Approach 1:
The patent transitions from planar resistor layout to a three-dimensional vertical structure by forming the resistive element on the reverse surface of the semiconductor substrate. This allows the resistive element to extend in the thickness direction (vertical dimension) rather than requiring large lateral area, thus achieving high resistance without enlarging the start-up terminal area.
Solution Approach 2:
The patent changes the geometric parameters of the resistive element by forming it with a predetermined thickness on the reverse surface of the substrate. By controlling the thickness parameter and forming the element vertically, the patent achieves the required resistance value while minimizing the lateral footprint, thereby reducing the area occupied on the start-up terminal.
2Manufacturing precision
If the impurity dosage is diluted to increase per unit length resistance, then resistance per unit length is increased, but variations in resistance are greatly increased
Solution Approach 1:
The patent optimizes the impurity dosage parameter within a specific range (1×10^19 to 1×10^21 atoms/cm³) to achieve the desired resistance per unit length while maintaining low variation. Additionally, the patent controls the thickness parameter of the resistive element (1 µm to 10 µm) to further adjust the resistance characteristics without relying solely on impurity dilution, thereby achieving both high resistance and low variation.
Solution Approach 2:
The patent forms the resistive element in a curved or spiral pattern on the reverse surface of the substrate. This curved configuration increases the effective path length of the resistive element within a compact area, thereby increasing the resistance per unit length without requiring excessive dilution of impurity dosage, which would increase resistance variations.
3Ease of manufacture
If spiral-shaped resistors are added to the start-up device structure, then high breakdown voltage resistors are embedded without new voltage-withstanding structure, but the area of the start-up terminal is enlarged
Solution Approach 1:
The patent utilizes the reverse surface of the semiconductor substrate to form the resistive element, effectively using the vertical thickness dimension rather than lateral area. This allows the high breakdown voltage resistor to be embedded in the existing start-up device structure without requiring additional lateral space, thus maintaining ease of manufacture while avoiding area enlargement.
Solution Approach 2:
The resistive element formed on the reverse surface serves multiple functions: it provides the high breakdown voltage resistance required for the start-up circuit, and simultaneously utilizes the otherwise unused reverse surface area of the substrate. This multi-functional approach allows embedding of the resistor without requiring additional dedicated space, thereby avoiding area enlargement of the start-up terminal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively lowers power consumption and reduces resistance variations, enabling a more compact and efficient semiconductor device design with improved performance.
Implementation Method 1
The start-up current is the result of rectifying an input alternating current signal of AC 100 to 240V
Implementation Method 2
voltage dividing resistors having a high breakdown voltage are formed using the voltage-withstanding structure of a device
Data Source
AI summary
A semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof; an insulating film on the semiconductor substrate; a primary wiring line connected to the first region and configured to receive a voltage from outside; a plurality of diodes connected in series on the insulating film and having a spiral shape generally centering around the first region in a plan view, the diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode; a resistor voltage divider having one end connected to another end of the series of diodes; a first connection wiring line connected to another end of the resistor voltage divider; and a second connection wiring line connected to a midpoint between the another end of the series of diodes and the another end of the resistor voltage divider.