Spiral Bifilar Voltage Multiplier With Offset Turns Against Flashover
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Solution Overview
Problem
Conventional spiral voltage multipliers suffer from insulation flashover due to short inter-turn creepage distance, leading to device failure and reduced lifespan, which cannot be adequately addressed by simply increasing creepage distance without compromising other performance requirements.
Innovation Solution
A high-voltage spiral voltage multiplier with axially offset center positions of adjacent turns in a bifilar winding configuration, utilizing an outer and inner metal film sandwiched by insulating films, which extends the inter-turn creepage distance and maintains equivalent capacitance through adjustments in film parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the inter-turn creepage distance is increased to prevent insulation flashover, then insulation reliability is improved, but the equivalent capacitance decreases and device dimensions increase
Solution Approach 1:
The patent applies asymmetry by axially offsetting the center positions of adjacent turns in the bifilar winding, creating an asymmetric spatial arrangement that increases the creepage distance along the insulation surface while maintaining compact overall dimensions and preserving equivalent capacitance through optimized geometric configuration
Solution Approach 2:
The patent resolves the contradiction by transitioning from a planar creepage path to a three-dimensional path along the insulation surface. The axial offset creates a spatial arrangement where the creepage distance extends along the surface of the insulation film rather than through straight-line distance, effectively increasing insulation path length without proportionally increasing device volume
2Reliability
If the inter-turn creepage distance is increased to prevent insulation flashover, then insulation reliability is improved, but device dimensions increase
Solution Approach 1:
The asymmetric axial offset of adjacent turns creates an optimized spatial configuration that maximizes creepage distance within compact device dimensions, preventing insulation flashover while maintaining a space-efficient structure
Solution Approach 2:
The patent utilizes three-dimensional spatial arrangement where the creepage path follows the surface of insulation films in multiple dimensions. The axial offset creates a stepped configuration that extends the insulation path along the surface rather than requiring proportional increases in overall device length or volume
3Reliability
If the equivalent capacitance is adjusted by changing film parameters to maintain performance, then electrical performance is preserved, but manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by adjusting the geometric parameters of the bifilar winding (axial offset distance, turn spacing, winding density) and insulation film properties to optimize the balance between creepage distance and equivalent capacitance, preserving electrical performance while enhancing insulation reliability
Solution Approach 2:
The patent implements local quality optimization by selectively adjusting parameters in different regions of the winding structure. The axial offset and film parameters are optimized locally at each turn interface to maximize creepage distance while maintaining overall equivalent capacitance through distributed parameter control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases insulation distance, reducing the likelihood of flashover while maintaining performance by adjusting equivalent capacitance, thus enhancing device reliability and scalability.
Implementation Method 1
the bifilar winding also serving as a primary energy-storage capacitor
Implementation Method 2
a step-up transformer
Implementation Method 3
a secondary energy-storage capacitor
Implementation Method 4
a transmission line. When the intermediate wire of the bifilar winding is charged to a set voltage Uo, the inner-layer winding and the outer winding have a same voltage amplitude but opposite polarities
Data Source
AI summary
A high-voltage spiral voltage multiplier includes an outer metal film and an inner metal film which are constructed into a spiral bifilar winding configuration, a first insulating film between the outer metal film and the inner metal film, and a second insulating film between the inner metal film and a further outer metal film adjacent thereto. The outer metal film and the inner metal film are spirally bifilarly wound into N turns of winding, center positions of any two adjacent turns being axially offset by at least a predetermined offset distance.