Spiral Resistor Shielding Layout for Interlayer Breakdown Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face performance degradation due to foreign substances like ions in the resin, which can affect the interlayer insulating layers and lead to breakdown when a voltage higher than the breakdown voltage is applied.
Innovation Solution
A semiconductor device configuration that includes a semiconductor substrate, impurity layers, an insulating film, a spiral-shaped resistive element, and a plurality of conductive films on the interlayer insulating layer, which are electrically coupled with the resistive element to reduce electric field strength and protect against foreign substances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive film is used to shield elements from foreign substances, then performance degradation is prevented, but the interlayer insulating layer may break down when voltage exceeds breakdown voltage
Solution Approach 1:
The conductive film is divided into a plurality of separate conductive patterns arranged in an array. Each conductive pattern is surrounded by its own deep groove, creating segmented shielding zones. This segmentation reduces the overall capacitance and distributes the electric field, preventing breakdown of the interlayer insulating layer while maintaining shielding effectiveness against foreign substances.
Solution Approach 2:
Deep grooves are introduced as intermediary structures between the conductive patterns and the underlying elements. These grooves act as mediators that reduce parasitic capacitance and electric field coupling, allowing the conductive film to shield elements from foreign substances without causing breakdown of the interlayer insulating layer through excessive voltage stress.
2Reliability
If the conductive film is made continuous to improve shielding, then protection against foreign substances increases, but parasitic capacitance increases causing performance degradation
Solution Approach 1:
The continuous conductive film is segmented into multiple discrete conductive patterns arranged in an array. This segmentation maintains shielding effectiveness by providing distributed protection zones while significantly reducing parasitic capacitance between the conductive film and underlying elements, as each pattern is isolated by deep grooves.
Solution Approach 2:
The conductive film is transformed from a two-dimensional continuous plane into a three-dimensional array of discrete patterns with vertical depth separation through grooves. This dimensional change allows the conductive structures to maintain shielding function while reducing parasitic capacitance by increasing the effective distance and reducing overlap area with underlying elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively reduces the risk of interlayer insulating layer breakdown and protects the semiconductor device from performance degradation caused by foreign substances, ensuring reliable operation under varying voltage conditions.
Implementation Method 1
an insulating film configured to cover at least the first impurity layer; a first interlayer insulating layer configured to cover the resistive element
Implementation Method 2
a plurality of first conductive films provided on the first interlayer insulating layer and electrically coupled with the resistive element
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a first impurity layer of a second conductivity type formed at a surface of the semiconductor substrate; a second impurity layer of a first conductivity type formed to surround the first impurity layer of the semiconductor substrate; an insulating film configured to cover at least the first impurity layer; a resistive element provided on the insulating film and having a spiral shape; a first interlayer insulating layer configured to cover the resistive element; and a plurality of first conductive films provided on the first interlayer insulating layer and electrically coupled with the resistive element.