Split Dual Gate Transistor Leakage Reduction
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Solution Overview
Problem
Current integrated circuits face challenges in reducing transistor leakage current while improving transistor drive current, as smaller device features lead to trade-offs between these parameters, making it difficult to achieve optimal performance and efficiency.
Innovation Solution
A method for making a split dual gate field effect transistor with independent gate biases, allowing for dynamic control of device characteristics such as threshold voltage, sub-threshold swing, and saturation drain current, and reducing leakage current without varying gate oxide thickness or doping profile, by forming separate gate regions with an insulation region in between.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the device feature size is reduced to increase circuit density, then the number of devices per wafer increases, but the transistor leakage current increases and drive current decreases
Solution Approach 1:
The gate is divided into two separate gate regions (first gate region and second gate region) that can be independently controlled. This segmentation allows each gate to be optimized for different functions: one gate can control threshold voltage to reduce leakage, while the other gate maintains drive current, thus resolving the contradiction between reduced device size and increased leakage current
2Power
If the threshold voltage is reduced to improve transistor drive current, then the drive current increases, but the transistor leakage current increases
Solution Approach 1:
By segmenting the gate into two independently controllable gate regions, the patent enables separate optimization of threshold voltage and drive current. One gate can be biased to maintain low threshold voltage for high drive current, while the other gate structure allows control of leakage through adjusted doping or geometry, resolving the energy loss contradiction
Solution Approach 2:
The patent changes physical parameters such as doping concentration in different regions, gate oxide thickness variations, or gate geometry to independently control the electrical characteristics of each gate region, allowing optimization of both drive current and leakage current without the traditional trade-off
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of transistors with adjustable threshold voltage and reduced leakage current, enhancing performance and efficiency by allowing independent gate biasing and maintaining gate oxide thickness and doping profile consistency.
Implementation Method 1
forming a source region in the substrate region by at least implanting a first plurality of ions into the substrate region and forming a drain region in the substrate region by at least implanting a second plurality of ions into the substrate region
Data Source
AI summary
A method for making a semiconductor device with at least two gate regions. The method includes providing a substrate region including a surface. Additionally, the method includes forming a source region in the substrate region by at least implanting a first plurality of ions into the substrate region and forming a drain region in the substrate region by at least implanting a second plurality of ions into the substrate region. The drain region and the source region are separate from each other. Moreover, the method includes depositing a gate layer on the surface and forming a first gate region and a second gate region on the surface.