Split-Electrode Vertical Cavity Optical Device Capacitance Reduction
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Solution Overview
Problem
Current semiconductor technologies face challenges in reducing capacitance and improving performance of optoelectronic devices due to high capacitance levels, which affect device speed and efficiency.
Innovation Solution
The semiconductor device employs an epitaxial layer arrangement with a first ohmic contact layer, a modulation doped quantum well structure, and isolation ion implant regions to reduce capacitance, featuring spacer layers, contact implant regions, and electrode terminals configured for optoelectronic functions such as diode lasers and detectors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional semiconductor device structures are used, then device fabrication is simpler, but capacitance levels remain high which reduces device speed and efficiency
Solution Approach 1:
The device structure is segmented into multiple functional epitaxial layers including n-type contact layers, modulation-doped quantum well layers, spacer layers, and isolation implant regions. Each layer serves a specific function in reducing capacitance while maintaining device performance, allowing the complex structure to be built systematically through selective ion implantation and epitaxial growth steps
Solution Approach 2:
Different regions of the device are given different doping types and concentrations tailored to local requirements. N-type regions are used where electron injection is needed, p-type regions where hole injection is needed, and intrinsic or lightly-doped regions where capacitance reduction is critical. This local optimization allows high speed performance without uniform complexity throughout the entire device
2Productivity
If capacitance is reduced through isolation implant regions, then device speed improves, but manufacturing process complexity increases
Solution Approach 1:
Isolation implant regions are created during the epitaxial growth process itself, before final device assembly. Oxygen ions are implanted into specific regions to create high-resistivity barriers that isolate charge carriers. This preliminary action reduces capacitance before the device is fully assembled, improving efficiency without requiring additional complex post-processing steps
Solution Approach 2:
The modulation-doped quantum well structures inherently create separation between charge carriers and scattering centers through their design. The quantum well confines carriers in a narrow region while doping is placed in adjacent barrier regions, allowing the structure to self-isolate carriers and reduce capacitance without requiring external isolation structures
3Reliability
If modulation doped quantum well structures are used, then device performance is enhanced, but device structure complexity increases
Solution Approach 1:
The quantum well structure is nested within a broader epitaxial layer system that includes contact layers, spacer layers, and isolation regions. The quantum well itself is nested within barrier layers with different band gaps. This nested arrangement allows the high-performance quantum well to be integrated into a complete device structure that manages complexity through hierarchical organization, where each nested level serves a specific function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces capacitance, enhancing device speed and efficiency by isolating charge carriers and optimizing the epitaxial layer structure for improved performance in optoelectronic devices.
Implementation Method 1
At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions.
Implementation Method 2
the first modulation doped quantum well structure has a modulation doped layer of a second doping type
Implementation Method 3
A first terminal electrode can be formed in electrical contact with the first modulation doped quantum well structure. The first and second terminal electrodes can be configured as terminals of a diode laser whereby injected electrical current flows between the first and second terminal electrodes and causes light generation and propagation within the resonant cavity.
Implementation Method 4
The first and second terminal electrodes can be configured as terminals of a diode laser whereby injected electrical current flows between the first and second terminal electrodes and causes light generation and propagation within the resonant cavity.
Data Source
AI summary
A split electrode vertical cavity optical device includes an n-type ohmic contact layer, first through fifth ion implant regions, cathode and anode electrodes, first and second injector terminals, and p and n type modulation doped quantum well structures. The cathode electrode and the first and second ion implant regions are formed on the n-type ohmic contact layer. The third ion implant region is formed on the first ion implant region and contacts the p-type modulation doped QW structure. The fourth ion implant region encompasses the n-type modulation doped QW structure. The first and second injector terminals are formed on the third and fourth ion implant regions, respectively. The fifth ion implant region is formed above the n-type modulation doped QW structure and the anode electrode is formed above the fifth ion implant region.