Split-Gate Power Transistor Overcurrent Protection With Fewer Circuits
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Solution Overview
Problem
Existing semiconductor devices have a complex configuration for overcurrent protection circuits, which increases their size and cost, limiting further miniaturization and cost reduction.
Innovation Solution
A semiconductor device with a split-gate power transistor and a gate control circuit that generates signals to individually control channel regions, incorporating an overcurrent protection circuit that turns off channels when the output current exceeds a threshold, simplifying the configuration and reducing size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional overcurrent protection circuit is used, then overcurrent protection function is achieved, but the device size and complexity increase
Solution Approach 1:
The patent combines the overcurrent protection function with the existing gate control circuit by adding a current detection unit and protection control unit that share circuit resources with the gate control functionality. The detection unit uses the same current path as the power transistor, and the protection control unit integrates with the gate control signals, merging multiple functions into a unified circuit structure that reduces overall complexity.
Solution Approach 2:
The gate control circuit is designed to serve multiple functions: normal power switching control and overcurrent protection. The same gate control signals are used both to control the power transistor operation and to activate the protection mechanism when overcurrent is detected, making the circuit multi-functional and eliminating the need for separate dedicated protection circuits.
2Reliability
If a conventional overcurrent protection circuit is used, then overcurrent protection function is achieved, but the device size increases
Solution Approach 1:
The protection circuit components are merged with the gate control circuit structure. The current detection unit shares the current path with the power transistor, and the protection control unit is integrated into the gate control signal generation path, eliminating the need for separate dedicated protection circuit blocks and reducing overall device area.
Solution Approach 2:
The overcurrent protection functionality is nested within the existing gate control circuit framework. The detection unit is embedded in the current path of the power transistor, and the protection control unit is nested within the gate control signal generation logic, creating a compact hierarchical structure where protection functions are contained within the control circuit rather than existing as separate external components.
Data Source
AI summary
For example, a semiconductor device includes a split-gate power transistor configured to have a plurality of channel regions controlled individually according to a plurality of gate control signals, a gate control circuit configured to generate the plurality of gate control signals, and an overcurrent protection circuit configured to turn off at least one of the plurality of channel regions when the output current passing through the power transistor exceeds a threshold voltage.