Split Probe Pad Structure for Semiconductor Chip Separation
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Solution Overview
Problem
Conventional semiconductor chip separation methods result in metal debris from probe pads, which can cause damage and render chips inoperable due to metal debris settling on chip walls and leading to delamination.
Innovation Solution
A split probe pad structure is formed with a non-metal region between two laterally separated probe pads, using interlayer dielectric layers and metal wires to electrically connect the probe pads to the substrate, allowing for chip separation without damaging the semiconductor devices and preventing metal debris release.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional probe pad structure is used during chip separation, then electrical testing can be performed before dicing, but metal debris is released that causes chip damage and delamination
Solution Approach 1:
The probe pad structure is segmented into two laterally separated probe pad structures, each independently connected to the substrate. This segmentation allows the kerf region to be separated between them without cutting through metal structures, preventing metal debris release during chip separation while maintaining electrical testing capability.
Solution Approach 2:
Metal structures are extracted from the kerf region by positioning probe pads laterally outside the separation path. The kerf region between the two probe pad structures is cleared of metal, eliminating the source of metal debris that would otherwise be released during laser ablation or mechanical cutting.
2Ease of operation
If probe pads are positioned in kerf region for electrical access, then chip testing is enabled, but cutting through probe pads releases metal debris
Solution Approach 1:
The probe pad structure transitions from a single in-plane configuration to a multi-dimensional arrangement with two laterally separated probe pads. This spatial reconfiguration in the lateral dimension allows the kerf to pass between rather than through metal structures, eliminating metal debris generation while preserving electrical access functionality.
Solution Approach 2:
A dielectric material is introduced as an intermediary between the substrate and the laterally separated probe pad structures. This dielectric layer provides electrical isolation and structural support, enabling the probe pads to be positioned laterally outside the kerf region while maintaining their electrical connection function.
3Device complexity
If single probe pad structure is used, then simple electrical connection is achieved, but chip separation causes metal debris and delamination
Solution Approach 1:
The probe pad structure is divided into two laterally separated probe pad structures, each with its own connection path to the substrate. This segmentation increases structural complexity but eliminates the need to cut through metal during separation, thereby improving chip integrity and preventing delamination.
Solution Approach 2:
Different regions of the substrate are assigned different functions: the kerf region is optimized for clean separation without metal, while the probe pad regions are positioned laterally to provide electrical access. This local differentiation of functional qualities allows simultaneous achievement of clean separation and electrical testing capability.
Data Source
AI summary
A structure and method for forming a split probe pad structure for a semiconductor structure. The split probe pad structure may include a first probe pad structure over a substrate, the first probe pad structure including a first probe pad in electrical communication with the substrate; a second probe pad structure over the substrate, the second probe pad structure including a second probe pad in electrical communication with the substrate, wherein the second probe pad structure is laterally separated from the first probe pad structure; and a non-metal region between the first probe pad structure and the second probe pad structure. The split probe pad structure may be formed in a kerf region of the semiconductor structure. The non-metal region may include a dielectric material.