Split-Rail Amplifier Well Structure for Breakdown Voltage Stability
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Solution Overview
Problem
Existing semiconductor integrated circuit (IC) devices with split rail amplifiers face challenges in simultaneously securing stable breakdown voltages between wells and substrates, which affects heat generation and performance.
Innovation Solution
The semiconductor IC device incorporates a substrate with defined amplifier areas, multiple wells, and deep wells of different conductivity types, allowing for specific voltage applications to each well and deep well configuration to enhance breakdown voltages, including the formation of NMOS and PMOS transistors, and operates in split-rail or rail-to-rail amplifier modes based on voltage settings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a punch-through breakdown voltage between the P-type pocket well and P-type substrate and a junction breakdown voltage between an N-type well and the P-type substrate are simultaneously secured in a stable manner, then the reliability is improved, but the device complexity increases due to multiple well structures
Solution Approach 1:
The patent implements a nested well structure where an N-type deep well is formed within a P-type pocket well, which itself is formed in an N-type well on the P-type substrate. This nested configuration allows multiple breakdown voltage requirements to be satisfied simultaneously through properly biased junctions at different nesting levels, resolving the contradiction between reliability improvement and device complexity increase.
2Temperature
If split rail amplifiers are used to suppress heat generation, then the temperature is reduced, but the device complexity increases due to specific well configurations
Solution Approach 1:
The patent applies local quality by creating regions with different conductivity types (N-type and P-type wells) in specific locations within the semiconductor device. The N-type deep well and P-type pocket well are strategically positioned in the amplifier region to provide local electrical characteristics that enable split rail amplifier operation, reducing heat generation while maintaining manageable device complexity through targeted rather than universal structure modification.
Data Source
AI summary
A semiconductor integrated circuit device includes: a substrate which has a first conductivity type and in which a first amplifier area and a second amplifier area are defined; a first well which has a second conductivity type, a first pocket well which has the first conductivity type and is separated from the first well, and a first deep well which has the second conductivity type, surrounds the first pocket well, and is separated from the first well; and a second well which has the second conductivity type, a second pocket well which has the first conductivity type and is separated from the second well, and a second deep well which has the second conductivity type, surrounds the second pocket well, and is separated from the second well The first well, the first pocket well, and the first deep well are formed in the first amplifier area of the substrate, and the second well, the second pocket well, and the second deep well are formed in the second amplifier area of the substrate.