Split Transistor Structure for Display Panel Yield
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Solution Overview
Problem
In the production of display panels, large-sized transistors in the GOA area are prone to short circuits due to insufficient exposure, leading to defects and reduced yield.
Innovation Solution
The display panel incorporates a split transistor structure with multiple electrode portions, where the first electrode is split into N first electrode portions and the second electrode into N second electrode portions, arranged in a way that reduces the size of large transistors into smaller pieces, avoiding short circuits by improving process uniformity and reducing exposure issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If large-sized transistors are manufactured in the GOA area, then the transistor can provide sufficient driving capability, but short circuits occur due to insufficient exposure
Solution Approach 1:
The transistor is divided into multiple sub-transistors (first transistor and second transistor) that are connected in parallel. Each sub-transistor has its own source electrode, drain electrode, and active layer, allowing the exposure process to be performed on smaller, separate regions. This segmentation maintains the overall driving capability while preventing short circuits by ensuring sufficient exposure for each smaller transistor region.
2Power
If large-sized transistors are manufactured in the GOA area, then the transistor can provide sufficient driving capability, but manufacturing defects increase due to exposure issues
Solution Approach 1:
By dividing the large transistor into smaller sub-transistors, the exposure process can be uniformly applied to each smaller region. This ensures that each sub-transistor receives adequate and uniform exposure, eliminating the exposure insufficiency problems that occur with large-sized transistors while maintaining the required driving capability through parallel connection.
3Power
If large-sized transistors are manufactured in the GOA area, then the transistor can provide sufficient driving capability, but production yield decreases due to short circuits
Solution Approach 1:
The segmentation of the transistor into smaller sub-transistors connected in parallel resolves the short circuit issues that plague large-sized transistor manufacturing. This approach maintains the necessary driving capability while significantly improving production yield by eliminating the exposure-related defects that cause short circuits in conventional large-sized transistors.
Data Source
AI summary
A display panel is provided. The display panel includes at least one transistor of a split structure. The transistor of the split structure comprises a control electrode, a first electrode and a second electrode; the first electrode comprises N first electrode portions, the second electrode comprises N second electrode portions, and N is an integer greater than 2; the N first electrode portions are electrically coupled, and the N second electrode portions are electrically coupled; the display panel has a plurality of transistor regions arranged at intervals, an n-th first electrode portion and an n-th second electrode portion are located in a same transistor region, an m-th first electrode portion and an (m+1)-th first electrode portion are respectively located in two adjacent transistor regions, n and in are an positive integers, n is less than or equal to N, and in is less than or equal to N−1.