SPM Substrate Processing with Two-Stage Flow for Splash Suppression
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Solution Overview
Problem
Existing substrate processing apparatuses face issues with liquid droplets of sulfuric acid/hydrogen peroxide mixture splashing during SPM processing, leading to substrate contamination and reduced efficiency.
Innovation Solution
The apparatus employs a substrate holding portion to rotate the substrate and a mixture supplying portion that alternates flow rates and sulfuric acid ratios of the sulfuric acid/hydrogen peroxide mixture, along with a splash suppression member to minimize droplet splash.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-temperature sulfuric acid/hydrogen peroxide mixture is supplied to the substrate, then SPM processing efficiency is improved, but liquid droplets splash from the substrate causing contamination
Solution Approach 1:
The SPM processing is divided into two distinct periods: a first period using high-temperature mixture (130-200°C) for efficient peeling, and a second period using lower-temperature mixture for splash suppression. This temporal segmentation allows each phase to optimize for its specific function without compromising the other.
Solution Approach 2:
The sulfuric acid ratio and flow rate are dynamically adjusted between the two periods. During the first period, higher sulfuric acid ratio (4:1 to 9:1) and flow rate are used for efficiency. During the second period, lower sulfuric acid ratio (2:1 to 3:1) and reduced flow rate are applied to minimize splashing while maintaining processing effectiveness.
2Object-affected harmful factors
If low-temperature sulfuric acid/hydrogen peroxide mixture is supplied to the substrate, then liquid droplet splash is suppressed, but SPM processing efficiency is reduced
Solution Approach 1:
The first period of high-temperature processing is performed first to achieve the primary SPM objective of removing target objects efficiently. Only after this preliminary efficient processing is complete does the second period begin, using lower temperature conditions specifically for splash suppression and substrate cleaning.
Solution Approach 2:
The temperature parameter is changed between periods: the first period uses high temperature (130-200°C) for efficiency, while the second period uses lower temperature to suppress droplet formation and splashing. This parameter change allows the system to optimize for different priorities at different times.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach efficiently performs SPM processing while significantly reducing liquid droplet splash, maintaining substrate cleanliness and processing efficiency.
Implementation Method 1
a sulfuric acid/hydrogen peroxide mixture, in which sulfuric acid and hydrogen peroxide water are mixed
Implementation Method 2
a substrate holding portion to hold and rotate a substrate
Data Source
Figure 1
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AI summary
A substrate processing apparatus (100) includes a substrate holding portion (20) to hold and rotate a substrate (W) and a mixture supplying portion (50) to supply a sulfuric acid/hydrogen peroxide mixture, which is generated by mixing sulfuric acid and hydrogen peroxide water, to the substrate (W) rotated by the substrate holding portion (20). The mixture supplying portion (50) supplies the sulfuric acid/hydrogen peroxide mixture to the substrate at a first flow rate in a first period, and supplies the sulfuric acid/hydrogen peroxide mixture to the substrate at a second flow rate smaller than the first flow rate during a second period subsequent to the first period. A ratio of the sulfuric acid of the sulfuric acid/hydrogen peroxide mixture during the second period is smaller than a ratio of the sulfuric acid of the sulfuric acid/hydrogen peroxide mixture during the first period.