Localized Spot Heating for Uniform Epitaxial Deposition
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in achieving uniform film deposition on substrates due to non-uniform thermal distribution and precursor flow rates, leading to variations in film thickness and material composition across the substrate.
Innovation Solution
The use of spot heaters that adjust radiation delivery based on angular position and power output, controlled by a controller with temperature correction factors, to correct thermal non-uniformities and precursor flow issues, ensuring uniform film growth and composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heating lamps are used to control substrate temperature, then the substrate can be heated within strict tolerances, but non-uniform thermal distribution within the substrate support and substrate causes non-uniform film deposition
Solution Approach 1:
The patent applies local quality by introducing spot heaters that can independently adjust temperature at specific angular positions on the substrate. Instead of uniform heating from lamps, the system creates localized heating zones to correct thermal non-uniformities in specific areas, making different parts of the substrate have different temperature characteristics as needed to achieve uniform film deposition.
Solution Approach 2:
The patent implements dynamics by making the heating system adjustable and adaptive. The spot heaters can be dynamically controlled to provide varying power output based on real-time temperature measurements and substrate position. This dynamic adjustment allows the system to compensate for thermal non-uniformities that would be impossible to correct with static lamp heating.
2Ease of manufacture
If uniform heating is applied across the substrate, then energy distribution is simplified, but non-uniform precursor flow rates cause non-uniform film deposition
Solution Approach 1:
The patent applies local quality by introducing spot heaters that can independently adjust temperature at specific angular positions on the substrate. Instead of uniform heating from lamps, the system creates localized heating zones to correct thermal non-uniformities in specific areas, making different parts of the substrate have different temperature characteristics as needed to achieve uniform film deposition.
Solution Approach 2:
The patent implements feedback by using temperature sensors to continuously monitor substrate temperature at various positions. This temperature data is fed back to the control system, which adjusts spot heater power output accordingly. This closed-loop feedback mechanism allows the system to automatically compensate for thermal non-uniformities and maintain uniform film deposition despite variations in precursor flow rates.
3Manufacturing precision
If spot heaters are added to correct thermal non-uniformities, then film uniformity is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the heating function into multiple independent spot heaters positioned at different angular locations on the substrate support. Each spot heater can be controlled independently to address local thermal non-uniformities. This segmentation allows precise local control while maintaining overall system manageability through modular architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances film uniformity by dynamically adjusting radiation to hot and cold spots, reducing substrate rejections and improving matching of substrate outputs across multiple processing chambers, thereby increasing manufacturing consistency.
Implementation Method 1
One or more spot heaters are disposed above the substrate support, and are configured to direct a radiation beam towards the substrate support
Data Source
AI summary
An apparatus for processing a substrate, suitable for use during semiconductor manufacturing is provided. The apparatus includes a chamber body, and a substrate support disposed within the chamber body. A plurality of upper lamps are disposed above the substrate support, and a plurality of lower lamps are disposed below the substrate support. One or more spot heaters are disposed above the substrate support, and are configured to direct a radiation beam towards the substrate support. The apparatus further includes a controller configured to control the one or more spot heaters. The controller is programmed to determine an angular position of the substrate and adjust a power output of one or more spot heaters using a set of temperature correction factors, such that the power output of the one or more spot heaters varies as the one or more spot heaters heat a plurality of angular portions of the substrate.