Spray Electrode Interconnects for Semiconductor Parasitic Reduction
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Solution Overview
Problem
Conventional wire bonding techniques for connecting power semiconductor devices to substrates or packages result in high parasitic inductance and resistance, limiting the frequency characteristics of high-power/high-frequency semiconductor devices due to inherent electrical parasitic inductance and resistance.
Innovation Solution
A semiconductor device with a substrate, source trace, drain trace, and gate trace, where insulating films cover the transistor, and source and gate spray electrodes connect the transistor pads to the traces, reducing parasitic inductance and resistance by replacing traditional wire bonding with a wider, more rectangular cross-sectional area interconnection structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding technique is used to connect power semiconductor devices to substrates or packages, then electrical connection is achieved, but parasitic inductance and resistance increase, limiting frequency characteristics
Solution Approach 1:
The patent extracts and eliminates the bonding wire from the connection structure, replacing it with a direct spray electrode-to-pad connection. This removes the source of parasitic inductance and resistance, achieving lower electrical parasitics while maintaining reliable electrical connection for high-frequency operation
Solution Approach 2:
The patent transitions from a thin-wire connection (one-dimensional) to a wide-area spray electrode connection (two-dimensional). The spray electrode has a wider and more rectangular cross-sectional area, fundamentally changing the connection geometry to reduce parasitic effects and improve frequency characteristics
2Object-generated harmful factors
If bonding wire is used for connection, then electrical connection is established, but the cross-sectional area is limited, resulting in higher parasitic inductance and resistance
Solution Approach 1:
The patent changes the geometric parameters of the connection structure by replacing a thin wire with a wide-area spray electrode. The spray electrode has a wider and more rectangular cross-sectional area, which directly reduces parasitic inductance and resistance while improving electrical connection performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces parasitic inductance and resistance, enhancing high-frequency switching performance of semiconductor devices.
Implementation Method 1
a spray technique is known as a technique to form copper (Cu) coating having a larger area than that of bonding wire
Data Source
AI summary
Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.