Spray-Coated Mask for Plasma Dicing Metal Electrodes
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Solution Overview
Problem
Existing methods for plasma dicing of substrates with metal electrodes face issues such as metal material scattering, contamination, and degradation of device characteristics due to exposure of electrodes to plasma, leading to unstable plasma generation and reduced productivity.
Innovation Solution
A method involving the formation of a mask on the substrate using a spray coating technique to cover the metal electrodes, ensuring complete coverage and protection during plasma etching, thereby preventing metal electrode degradation and maintaining productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma etching is performed without masking the metal electrode, then the etching process can be completed, but the metal electrode degrades due to plasma exposure causing metal material scattering and contamination
Solution Approach 1:
A mask layer is introduced as an intermediary substance between the plasma and the metal electrode. The mask layer absorbs the harmful plasma effects while allowing the etching process to proceed, thereby protecting the metal electrode from degradation, scattering, and contamination without interfering with the overall manufacturing process
Solution Approach 2:
The mask layer is formed on the metal electrode surface before the plasma etching process begins. This preliminary protective action ensures that the metal electrode is already shielded when plasma exposure occurs, preventing degradation before it can happen
2Reliability
If a mask is formed to cover the metal electrode, then plasma damage is prevented, but the device complexity increases due to additional masking steps
Solution Approach 1:
The mask layer serves multiple functions simultaneously: it protects the metal electrode from plasma damage, defines the etching boundaries, and can be integrated with existing photolithography processes. This multi-functionality reduces the need for separate protective measures, thereby limiting the increase in manufacturing process complexity
3Productivity
If the metal electrode is exposed to plasma, then the plasma dicing process can be performed, but metal material scatters and contaminates the substrate leading to reduced yield
Solution Approach 1:
The mask layer acts as a barrier that prevents metal material from scattering and contaminating the substrate during plasma dicing. It allows the plasma process to proceed efficiently while containing the metal material, thereby maintaining productivity without the loss of substance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes plasma generation, reduces contamination, enhances the smoothness of the chip surface, improves yield, and maintains the reliability and electrical characteristics of the metal electrodes, while also reducing manufacturing costs.
Implementation Method 1
A method involving the formation of a mask on the substrate using a spray coating technique to cover the metal electrodes
Implementation Method 2
singulating the substrate by exposing the first face of the substrate to first plasma and etching the dividing region
Data Source
AI summary
A semiconductor chip manufacturing method includes preparing a semiconductor wafer including a front surface on which a bump is exposed, a rear surface located at a side opposite to the front surface, a plurality of element regions in each of which the bump is formed, and a dividing region defining each of the element regions, forming a mask which covers the bump and has an opening exposing the dividing region on the surface of the semiconductor wafer by spraying liquid which contains raw material of the mask along the bump by a spray coating method, and singulating the semiconductor wafer by exposing the surface of the semiconductor wafer to first plasma and etching the dividing region, which is exposed to the opening, until the rear surface is reached in a state where the bump is covered by the mask.