Spring-Loaded Semiconductor Chip Stack for Uniform Pressure Contact
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Solution Overview
Problem
Existing pressure-contact type semiconductor devices require an external pressure-contact mechanism to maintain contact between the semiconductor pellet and the terminal plates, which can be bulky and inefficient.
Innovation Solution
The semiconductor device employs a coil spring and stepped electrodes to generate a repulsive force that presses the semiconductor chip against the electrode plate, eliminating the need for an external pressure-contact mechanism.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an external pressure-contact mechanism is used to achieve pressure contact between the semiconductor pellet and terminal plates, then reliable electrical connection is achieved, but the device becomes bulky and complex
Solution Approach 1:
The patent extracts and eliminates the external pressure-contact mechanism from the device structure. Instead of using a separate mechanism to apply pressure, the invention integrates the pressing function directly into the electrode plate structure through stepped portions that inherently provide the necessary contact pressure when stacked, thereby simplifying the overall device while maintaining reliable electrical connection
Solution Approach 2:
The patent merges the electrical connection function with the mechanical pressing function into a single integrated structure. The stepped electrode plate structure simultaneously provides both the electrical pathway and the mechanical pressure needed for contact, eliminating the need for separate pressure-contact components and reducing device complexity
2Stability of the object's composition
If an external pressure-contact mechanism is used to maintain contact between semiconductor components, then stable pressing force is achieved, but the device size increases
Solution Approach 1:
The electrode plate is segmented into multiple stepped portions with different levels, where each step creates a localized pressing interface. This segmentation allows the pressing force to be distributed across multiple contact points through the stacked structure, maintaining stable contact pressure without requiring a large external mechanism
Solution Approach 2:
The patent transitions from a planar electrode structure to a three-dimensional stepped structure. The vertical stacking of stepped portions at different heights creates pressing force through the thickness dimension, enabling compact device volume while maintaining stable contact pressure through the layered configuration
3Volume of stationary object
If a simple structure without external pressure-contact mechanism is used, then device size is reduced, but uniform pressing force across different chip positions becomes difficult to achieve
Solution Approach 1:
The stepped electrode plate structure provides locally optimized pressing interfaces at each step level. Each stepped portion is designed with specific dimensions and positions to ensure that the pressing force is uniformly distributed across all semiconductor chips regardless of their positions, achieving manufacturing precision through localized structural features rather than global mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for consistent and uniform pressing force on each semiconductor chip without the need for external mechanisms, reducing device size and variability in pressing force across different chip positions.
Implementation Method 1
The first coil spring is disposed in the first through hole, and is compressed by the first plate electrode and the first lower step portion to generate a repulsive force that presses the first plate electrode toward the first semiconductor chip
Data Source
AI summary
A semiconductor device includes: a first electrode plate; a first semiconductor chip disposed on the first electrode plate; a first plate electrode disposed on the first semiconductor chip; a first columnar electrode disposed on the first plate electrode; a first coil spring; a first stepped electrode having a first lower step portion disposed on the first columnar electrode and a first upper step portion disposed on the first lower step portion; a first insulating frame having a first side wall and a first upper wall continuous with an upper end of the first side wall; and a second electrode plate electrically connected to the first upper step portion are provided. The first columnar electrode is formed with a first through hole that penetrates the first columnar electrode in the thickness direction of the first electrode plate.