Spark Plasma Sintered SiC Chamber Components for Plasma Etch Resistance
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Solution Overview
Problem
Conventional silicon carbide (SiC) components produced by chemical vapor deposition (CVD) for plasma processing chambers fail to meet the increased demands of aggressive plasma chemistries and stringent lifetime requirements, leading to premature degradation and consumption.
Innovation Solution
A non-oxide silicon containing powder composition with boron (B) or boron carbide (B4C) dopants is subjected to spark plasma sintering (SPS) to form high-density, machinable components for plasma processing chambers, which are then processed into edge rings and gas distribution plates with enhanced etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD method is used to produce SiC components, then the components can be manufactured with existing processes, but the components fail to meet lifetime requirements under aggressive plasma chemistries
Solution Approach 1:
The patent changes the manufacturing parameters by using spark plasma sintering instead of CVD, and modifies the material composition by adding boron or boron carbide dopants to the silicon carbide. These parameter changes result in components with superior etch resistance and lifetime performance under aggressive plasma chemistries while maintaining manufacturability
Solution Approach 2:
The patent creates a composite material system by doping silicon carbide with boron or boron carbide. This composite approach enhances the etch resistance and durability of the components for plasma processing chamber applications, solving the lifetime problem while keeping the base material (SiC) compatible with existing manufacturing infrastructure
2Reliability
If thicker SiC coating is grown by CVD to improve etch resistance, then the coating provides better protection, but the manufacturing time and cost increase
Solution Approach 1:
The patent changes the manufacturing method from CVD to spark plasma sintering, which dramatically reduces processing time. The SPS process can produce dense SiC components in minutes rather than the hours required for thick CVD coating growth, while achieving equal or superior etch resistance through the dopant-enhanced material composition
Solution Approach 2:
The patent applies dopants (boron or boron carbide) locally within the SiC material structure to enhance etch resistance throughout the component. This localized quality enhancement at the material level eliminates the need for thick coatings, achieving better protection with thinner, faster-to-produce components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SPS process results in components with nearly 100% relative density and isotropic properties, significantly reducing erosion and impurity generation, thereby extending component lifetime and maintaining performance in plasma processing environments.
Implementation Method 1
The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component
Data Source
AI summary
A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.