Sputter Deposition Apparatus for Maskless Patterned Stripes
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Solution Overview
Problem
Mask-based sputter deposition methods are wasteful and inefficient, requiring frequent cleaning and resulting in material wastage, as they deposit material on masks rather than substrates, disrupting continuous operation.
Innovation Solution
A sputter deposition apparatus with a plasma generation arrangement and conveyor system that allows for continuous deposition of targeted material stripes on substrates by positioning targets relative to the substrate, eliminating the need for masks and reducing material wastage through controlled magnetic fields and elongate antennae for uniform plasma distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mask-based deposition is used to create patterns on substrates, then patterned deposition is achieved, but material is wasted on the mask and frequent cleaning is required
Solution Approach 1:
The patent removes the mask component entirely from the deposition system. Instead of using a mask to define patterns, the system directly deposits material only in desired areas through controlled plasma confinement and selective target positioning, eliminating material waste on masks and the need for cleaning operations
Solution Approach 2:
Rather than protecting areas with a mask and depositing material everywhere else, the invention inverts the approach by selectively confining plasma and depositing material only where needed, leaving unmasked areas free of deposition. This eliminates the fundamental waste problem of mask-based methods
2Manufacturing precision
If mask-based deposition is used, then patterned material deposition is achieved, but deposition efficiency is reduced due to frequent mask cleaning
Solution Approach 1:
The patent enables continuous deposition operations by eliminating the mask cleaning interruption cycle. The conveyor-based system with selective plasma confinement allows uninterrupted material deposition onto moving substrates, maintaining continuous productive action without periodic maintenance stops
Solution Approach 2:
By removing the mask component entirely, the system eliminates the source of inefficiency (mask cleaning requirements). The patterned deposition is achieved through direct plasma control and target positioning rather than through a mask that requires maintenance
3Quantity of substance
If conventional sputter deposition is used, then material deposition occurs, but material is deposited on masks in masked areas rather than on substrates
Solution Approach 1:
The patent applies local quality by confining plasma and material deposition to specific localized regions corresponding to desired pattern areas. Through selective target positioning and plasma confinement, material is deposited with the correct local properties only where needed, preventing waste on masked areas
Solution Approach 2:
The invention extracts and removes the mask from the system entirely. Patterned deposition is achieved through direct control of plasma and target positioning, ensuring material is deposited only on substrate areas where it is needed, eliminating the fundamental waste mechanism of mask-based approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and continuous deposition of patterned material stripes on substrates with reduced wastage, improving deposition efficiency and flexibility in producing various patterns without the use of masks.
Implementation Method 1
a sputter gas, such as an inert gas, such as argon, is introduced into a vacuum chamber at low pressure, and the sputter gas is ionised using energetic electrons to create a plasma
Implementation Method 2
the sputter gas is ionised using energetic electrons to create a plasma
Implementation Method 3
a conveyor system arranged to convey a substrate through the sputter deposition zone in a conveyance direction
Implementation Method 4
Bombardment of the target by ions of the plasma ejects target material which may then deposit on the substrate surface
Data Source
AI summary
A sputter deposition apparatus including: a remote plasma generation arrangement arranged to provide a plasma for sputter deposition of target material within a sputter deposition zone; a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma in the sputter deposition zone a substrate provided within the sputter deposition zone; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate. The confining arrangement confines the remote plasma to the target support assemblies such that in use there is deposited: target material as a first region on the substrate; target material as a second region on the substrate; and an intermediate region between the first and second region including a blend of target materials.