Sputter-Enhanced Evaporative Deposition Apparatus
Solution Overview
Problem
Existing thin film deposition methods often modify both physical and chemical properties of the deposited film, leading to undesirable changes that do not meet application requirements.
Innovation Solution
A deposition apparatus and method that uses a combination of an evaporation source and an ion beam sputtering source to control the energy of deposited atoms, allowing for independent adjustment of evaporation and sputtering power, thereby modifying the physical properties of the thin film without introducing foreign ions that alter its chemical composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If ion beam sputtering is used to modify thin film properties, then physical properties can be enhanced, but foreign ions are introduced that alter chemical composition
Solution Approach 1:
The patent introduces a sputtering source as an intermediary component that generates ions to modify the thin film properties. This intermediary allows physical property enhancement through ion bombardment while the system design ensures chemical integrity is maintained by controlling the deposition environment and using appropriate sputtering gases that do not contaminate the film composition.
Solution Approach 2:
The patent employs parameter changes by independently controlling the sputtering power and evaporation power, allowing optimization of ion energy and flux to enhance physical properties while maintaining chemical composition. The ability to adjust sputtering parameters separately enables modification of film density and microstructure without altering the base material composition.
2Strength
If plasma assist or ion assist deposition is used to add energy to deposited layer, then physical properties are improved, but foreign atoms are implanted altering chemical composition and structure
Solution Approach 1:
The patent extracts the harmful effect of foreign atom implantation by using a sputtering source that generates ions from the deposit material itself rather than external plasma. This extraction approach removes the contamination issue while preserving the energy transfer benefit for improving physical properties.
Solution Approach 2:
The patent converts the potential harm of ion bombardment (which could introduce contaminants) into a benefit by using sputtering ions derived from the material itself. The ion bombardment enhances physical properties like density and microstructure while the ions are composed of the same material, preventing chemical contamination.
3Productivity
If evaporation source is used to deposit material, then deposition can be achieved, but energy utilization is inefficient requiring additional cooling power
Solution Approach 1:
The patent merges the evaporation source and sputtering source into a single integrated deposition system. This combination allows the sputtering process to enhance the evaporation deposition while the ions generated during sputtering contribute to heating the substrate, improving energy utilization and reducing the cooling power required compared to evaporation alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of the average energy of deposited atoms, enhancing the physical properties of the thin film without chemical contamination, improving energy utilization and reducing cooling requirements, while maintaining the chemical integrity of the deposited layer.
Implementation Method 1
an evaporation source that receives therein the material to be deposited
Implementation Method 2
a sputtering source operable to produce sputtering ions directed at the material to be deposited in the evaporation source
Implementation Method 3
The deposited thin film may also be processed to modify its properties... the surface of the deposited thin film may be bombarded with energetic ions different from the deposited material
Data Source
AI summary
A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.