Sputtered Multi-Layer Electrode for Semiconductor Devices
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Solution Overview
Problem
Traditional methods for manufacturing electrodes for semiconductor devices like metal oxide varistors and PTC thermistors, such as electroless nickel-plating, fired alloy method, and screen printing, face issues with toxicity, poor aging characteristics, and inadequate corrosion resistance, especially with the transition to lead-free soldering, which compromises the safety and performance of electronic components.
Innovation Solution
The use of a multiple metallic layers structure formed by the sputtering technique, comprising a sputtered intermetallic buffer layer and a sputtered electrical contact layer, with specific alloys like NiCr, TiNi, and AlNi for the buffer layer and metals like Cu, Ag, Au, or Pt for the contact layer, enhancing ohmic contact and binding strength, and optionally including additional heat treatment for stress release.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If screen printing method is used to manufacture silver electrodes, then manufacturing cost is reduced and ease of manufacture is improved, but corrosion resistance deteriorates and reliability worsens due to etching by lead-free solder
Solution Approach 1:
The patent employs a composite electrode structure consisting of multiple metallic layers with distinct functions: a nickel-chromium alloy layer providing corrosion resistance and adhesion, a copper layer providing electrical conductivity, and a silver layer providing low contact resistance. This composite structure resolves the contradiction by combining materials that individually address different requirements, achieving both ease of manufacture through sputtering and superior corrosion resistance against lead-free solder.
Solution Approach 2:
The electrode is segmented into multiple functional layers, each performing a specific function: the nickel-chromium layer handles adhesion and corrosion protection, the copper layer provides bulk conductivity, and the silver layer ensures low contact resistance. This segmentation allows each layer to be optimized for its specific function while collectively solving the contradiction between manufacturing ease and corrosion resistance.
2Device complexity
If traditional fired alloy method is used, then manufacturing complexity is reduced, but aging characteristics worsen and reliability deteriorates
Solution Approach 1:
The patent replaces the traditional thermal firing process with a physical vapor deposition process (sputtering). Instead of using high-temperature firing to sinter metal particles, the sputtering process directly deposits dense, adherent metallic layers through physical bombardment. This substitution eliminates the need for complex firing schedules while producing electrodes with superior aging characteristics and reliability.
Solution Approach 2:
The patent changes the fundamental process parameters from thermal processing (firing temperature, time, atmosphere) to physical processing (sputtering power, gas pressure, deposition rate). This parameter change enables the formation of electrodes with controlled thickness, composition, and microstructure that provide excellent aging resistance without requiring complex thermal processing equipment or procedures.
3Strength
If electroless nickel plating is used, then adhesion is improved, but manufacturing complexity increases and harmful factors are introduced due to poisonous CI
Solution Approach 1:
The patent converts the harmful chemical plating process into a beneficial physical deposition process. By using sputtering instead of electroless plating, the harmful cyanide chemicals are eliminated entirely, replaced by a clean vacuum process using inert gases. The adhesion benefits of nickel plating are achieved through the nickel-chromium sputtered layer, which provides equivalent or superior adhesion without any toxic substances.
Solution Approach 2:
The nickel-chromium alloy layer serves as an intermediary between the ceramic substrate and the copper electrical contact layer. This intermediate layer provides both adhesion to the substrate and a diffusion barrier, while the sputtering process itself acts as a clean intermediary method that avoids direct chemical contact with harmful substances, eliminating the need for cyanide-based plating solutions.
4Reliability
If silver content in solder is increased to avoid pseudo soldering, then corrosion resistance is improved, but manufacturing cost increases
Solution Approach 1:
The electrode structure segments the silver content into a thin surface layer rather than requiring bulk silver solder. The silver layer in the electrode (not the solder) provides the necessary corrosion resistance at the critical interface with the ceramic, while the solder itself can use lower silver content alloys. This segmentation eliminates the need for high-silver solder while maintaining corrosion protection where it is most needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in electrodes with improved adhesion, reduced aging, and increased surge withstand capability, providing better performance and environmental sustainability by achieving lower contact resistance and higher overload current, while meeting stringent testing standards like IEC61051-1-2018 for lightning protection.
Implementation Method 1
The use of a multiple metallic layers structure formed by the sputtering technique
Implementation Method 2
optionally including additional heat treatment for stress release
Data Source
AI summary
An electrode with multiple metallic-layers structure formed by a magnetron sputtering technique for a semiconductor device and method for producing same is disclosed. The ceramic device includes at least one from selected group consisting of ZnO-MOV (metal oxide varistors), BaTiO3-PTC (positive temperature coefficient) thermistors, Mn3O4-NTC (negative temperature coefficient) thermistors, and capacitors. The multiple metallic-layers include a sputtered buffer layer and a sputtered electrical contact layer. The buffer layer includes at least one alloy selected form group consisting of NiCr (Ni from 50-90 wt %), TiNi (Ti from 40-60 wt %), and AlNi (Al from 40-70 wt %) and the thickness of this layer is from greater than zero to less than 100 nm. The electrical contact layer includes at least one of Cu, Ag, Pt, Au, or combination. More specifically, the electrode includes one of NiCr/Cu system, NiCr/Ag system, NiCr/Cu/Ag system, TiNi/Cu/Ag system, or AlNi/Cu/Ag system. The thickness ratio of the electrical contact layer to the intermetallic barrier layer is from 1 to 4.


