Sputtering Apparatus Alloy Film Concentration Gradient
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Solution Overview
Problem
The miniaturization of wiring patterns in semiconductor devices poses challenges in forming uniform and thin barrier films and seed layers, as existing methods require multiple treatment vessels and are inefficient in controlling additive metal concentrations, leading to issues with electromigration and increased wiring resistance.
Innovation Solution
A sputtering method and apparatus that use a single treatment vessel with a metal target alloy to form alloy films with a concentration gradient by varying parameters such as pressure and electric power, allowing for the formation of films with different additive metal concentrations without the need for multiple vessels, thereby improving throughput and control over the alloy film composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple treatment vessels are used to form alloy films with different additive metal concentrations, then the control over additive metal concentration is improved, but the device complexity and transfer time between vessels increase
Solution Approach 1:
The patent applies parameter changes by varying sputtering conditions (power, pressure, gas flow rates) during the deposition process to control the concentration gradient of additive metals in the alloy film. This allows different additive metal concentrations to be achieved in a single treatment vessel by changing process parameters rather than using multiple vessels, thereby reducing device complexity while maintaining manufacturing precision
2Manufacturing precision
If multiple treatment vessels are used to form alloy films with different additive metal concentrations, then the control over additive metal concentration is improved, but the transfer time between vessels increases
Solution Approach 1:
The patent merges the functions of multiple treatment vessels into a single treatment vessel by enabling the formation of alloy films with different additive metal concentrations through controlled sputtering processes. This consolidation eliminates the need for transferring substrates between multiple vessels, thereby reducing transfer time while maintaining the ability to control additive metal concentrations through process parameter adjustments
3Length of moving object
If the width of the depressed portion is miniaturized, then the wiring pattern miniaturization is achieved, but the uniformity of barrier film and seed layer formation deteriorates
Solution Approach 1:
The patent applies local quality by creating a concentration gradient of additive metals within the alloy film, where the concentration of additive metal varies through the film thickness. This gradient structure ensures that the barrier film and seed layer formed on the miniaturized depressed portions maintain high uniformity and reliability, as the local composition can be optimized for different functional requirements
4Length of moving object
If the barrier film and seed layer are formed thinner, then the wiring miniaturization is achieved, but the reliability against barrier property and contactability deteriorates
Solution Approach 1:
The patent employs composite materials by forming an alloy film that contains both main metal (e.g., Cu) and additive metal (e.g., Mn) in a controlled concentration gradient. This composite alloy structure provides both the thin film thickness required for wiring miniaturization and the enhanced reliability for barrier property and contactability, as the additive metal elements improve the functional properties of the alloy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of alloy films with desired additive metal concentrations, reducing the size of the apparatus, minimizing transfer time between vessels, and enhancing the uniformity and reliability of barrier films, while suppressing electromigration and wiring resistance.
Implementation Method 1
supplying an electric power to this gas for plasmanizing, thereby forming a first alloy film on the processing object by the particles of the metal target sputtered with the plasma
Implementation Method 2
supplying an electric power to this gas for plasmanizing
Data Source
AI summary
The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.