Sputtering Anode Shielding for Stable Plasma Generation
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Solution Overview
Problem
In sputtering techniques, the formation of a compound film on the anode can lead to a decrease in current flowing to the anode, resulting in unstable plasma generation.
Innovation Solution
A sputtering apparatus is designed with a target having a first opening, an anode, and a metal member, where the anode and metal member are electrically insulated and positioned corresponding to the first opening of the target. The metal member is set to a ground potential or a floating potential, effectively shielding the anode and reducing the formation of a compound film on it.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the anode is disposed to face the plasma generation space, then plasma generation is enabled, but a compound film is formed on the anode causing current decrease and unstable plasma
Solution Approach 1:
A metal member (shielding plate) is introduced as an intermediary between the anode and the plasma generation space. This shielding plate faces the plasma generation space while the anode remains behind it, preventing direct exposure of the anode to the plasma environment. The metal member acts as a mediator that protects the anode from compound film formation while still allowing the plasma to generate and function properly.
2Productivity
If the anode is exposed to the plasma generation space, then sputtering process can be performed, but the anode surface becomes contaminated with metal oxide films reducing current flow
Solution Approach 1:
The system is segmented into distinct functional zones: the plasma generation space where sputtering occurs, the shielding plate that separates this space from the anode, and the anode itself. This segmentation allows the plasma generation region to remain exposed and active while the anode is protected in a separate, shielded region, preventing contamination while maintaining productivity.
3Device complexity
If no shielding structure is used, then device complexity is low, but plasma stability deteriorates due to compound film formation on anode
Solution Approach 1:
A relatively simple metal member (shielding plate) is introduced as an intermediary component. This single structural element provides effective protection against compound film formation on the anode while maintaining plasma generation stability. The shielding plate's simplicity in design achieves the desired reliability improvement without significantly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration stabilizes plasma generation by reducing the formation of insulating metal oxide films on the anode, thereby maintaining a consistent current flow and ensuring long-term stability of the plasma.
Implementation Method 1
The anode and the metal member are disposed at positions corresponding to a first opening of the target in the placement portion. The metal member is set to a ground potential or a floating potential, effectively shielding the anode and reducing the formation of a compound film on it.
Implementation Method 2
Japanese Patent Laid-Open No. 2008-202079 discloses a sputtering apparatus including a target serving as a cathode, and an anode disposed at the center of the target. The anode is provided to face an electric discharge space serving as a plasma generation space.
Data Source
AI summary
A sputtering apparatus includes a placement portion where a target having a first opening is placed, an anode, and a metal member. The anode and the metal member are disposed at positions corresponding to the first opening of the target in the placement portion. The anode and the metal member are electrically insulated from each other. The metal member is set to a ground potential or a floating potential.