Sputtering Apparatus Capture Net for Substrate Damage Reduction
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Solution Overview
Problem
Sputtering methods often cause damage to thin films due to the collision of ions and electrons with the substrate during the formation of thin films, which is undesirable for high-quality film formation in semiconductor and display device fabrication.
Innovation Solution
A sputtering apparatus with a capture net made of conductive materials like silver, copper, or palladium, positioned between the plasma generation area and the substrate, captures electrons and anions, preventing them from reaching the substrate and minimizing damage. The capture net is grounded and designed with specific shapes such as a lattice or spider web, and is powered by a DC or RF electric field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sputtering is used to form thin films, then thin films can be formed on substrates, but ions and electrons collide with the substrate causing damage to the thin film
Solution Approach 1:
A capture net is introduced as an intermediary component between the sputtering plasma region and the substrate. The capture net, which is electrically conductive and grounded, intercepts and captures electrons and anions before they can reach the substrate, thereby preventing substrate damage while allowing the sputtering process to continue
Solution Approach 2:
The harmful electrons and anions are extracted from the plasma flow by the capture net. By placing the grounded conductive net in the path of the plasma, the negative charged particles are removed from the stream that would otherwise reach and damage the substrate
2Object-affected harmful factors
If a capture net is added to prevent electron and anion collision, then substrate damage is reduced, but device complexity increases
Solution Approach 1:
The capture net is implemented as a thin, flexible mesh structure rather than a solid barrier. This thin-film approach allows the capture net to be integrated into the existing sputtering chamber with minimal disruption to the plasma flow and substrate positioning, reducing the overall device complexity increase
Solution Approach 2:
The capture net serves multiple functions: it captures electrons and anions to prevent substrate damage, maintains electrical ground potential in the chamber, and can be positioned to accommodate different substrate sizes and shapes, making it a versatile component that addresses multiple concerns simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces electron and anion impact on the substrate, resulting in less damaged thin films with improved conductivity and a wider process margin, allowing for the formation of high-quality thin films with reduced damage and increased uniformity.
Implementation Method 1
a capture net disposed between the first space and the substrate mounting stand
Implementation Method 2
a power supply portion applying a voltage between the first target mounting portion and the first electrode and between the second target mounting portion and the second electrode
Implementation Method 3
The sputtering is one of evaporation technique, and generates plasma at a relatively low temperature by accelerating a gas such as argon, colliding the same to a target, and having atoms or molecules emit from the targets
Data Source
AI summary
A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.