Sputtering Chamber Cleaning by Oxygen Plasma Oxidation
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Solution Overview
Problem
Existing sputtering apparatuses face issues with redeposited materials in the process chamber, which can interrupt subsequent processes and require chamber opening for cleaning, leading to inefficiencies.
Innovation Solution
A method for cleaning the sputtering apparatus involves removing and oxidizing redeposited materials using oxygen gas and controlled RF power, without opening the process chamber, utilizing a sputtering system with a process chamber, stage, discharge tube, and RF coil.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the process chamber is opened to remove redeposited materials, then the chamber can be cleaned, but the etching process is interrupted and productivity decreases
Solution Approach 1:
The patent replaces mechanical cleaning methods (which require opening the chamber) with a plasma-based chemical cleaning system. A second plasma is generated inside the closed process chamber to oxidize and remove redeposited materials, eliminating the need to open the chamber and thus maintaining process continuity
Solution Approach 2:
The patent introduces oxygen as an intermediary substance that facilitates the removal of redeposited materials. Oxygen is supplied during the second plasma generation to oxidize the redeposited copper, enabling effective cleaning without mechanical intervention or chamber opening
2Reliability
If high RF power is applied continuously to remove redeposited materials, then cleaning effectiveness improves, but energy consumption increases
Solution Approach 1:
The patent employs periodic action by dividing the cleaning process into two distinct plasma generation steps with different RF power levels. The first plasma uses high RF power for initial material removal, followed by a second plasma at lower RF power for final cleaning, thereby reducing overall energy consumption while maintaining effectiveness
Solution Approach 2:
The patent changes the RF power parameter between two cleaning stages. The first plasma generation uses high RF power (e.g., 100-300W) for aggressive material removal, while the second plasma generation uses lower RF power (e.g., 50-150W) for gentle finishing, optimizing the balance between cleaning effectiveness and energy efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces and oxidizes redeposited materials, ensuring uninterrupted etching processes and efficient operation of the sputtering apparatus, saving energy and time by optimizing RF power usage.
Implementation Method 1
oxidizing a remaining portion of the first material deposited in the sputtering apparatus after the removing the portion of the first material deposited in the sputtering apparatus, where the sputtering apparatus includes: a process chamber which provides a process space; a stage within the process space; a discharge tube which provides a plasma discharge space extended to the process space; and a radio frequency ('RF') coil which wraps the discharge tube, and wherein oxidizing the remaining portion of the first material deposited in the sputtering apparatus includes supplying an oxygen gas to the plasma discharge space
Implementation Method 2
a discharge tube which provides a plasma discharge space extended to the process space; and a radio frequency ('RF') coil which wraps the discharge tube
Data Source
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AI summary
A method for cleaning a sputtering apparatus includes removing a portion of a first material deposited in the sputtering apparatus, and oxidizing a remaining portion of the first material deposited in the sputtering apparatus after the removing the portion of the first material deposited in the sputtering apparatus. The sputtering apparatus includes a process chamber which provides a process space, a stage within the process space, a discharge tube which provides a plasma discharge space extended to the process space, and a radio frequency ("RF") coil which wraps the discharge tube. The oxidizing the remaining portion of the first material deposited in the sputtering apparatus includes supplying an oxygen gas to the plasma discharge space.