Sputtering Composite Target for Low-Temperature Transparent Conductive Films

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Solution Overview

Problem

Existing methods for manufacturing transparent conductive films, such as ITO, face challenges in achieving low electrical resistance and good conductivity while maintaining low temperature processing, especially when using substrates with low heat resistance, and often result in complex equipment and inefficient fabrication due to issues like hydrogen ion implantation and sintering density problems.

Innovation Solution

A sputtering composite target comprising an oxide-based component with indium oxide and a carbon-based component is used to introduce a stable amount of oxygen vacancies, allowing for the formation of transparent conductive films with low electrical resistance and good conductivity without high-temperature processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high-temperature heating (about 300°C) is applied to enhance electrical and optical characteristics of the transparent conductive film, then the film quality is improved, but substrates with low heat-resistant temperature (such as plastics) cannot be processed

Engineering Contradiction:
Improvefilm qualityVSAvoidsubstrate temperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The invention changes the chemical composition parameters of the sputtering target by incorporating specific metal elements (Ti, Zr, Hf, Nb, Ta, or Mo) at controlled concentrations (0.1-10 at%). This compositional modification enables the film to achieve good electrical and optical characteristics without requiring high-temperature substrate heating, thus resolving the contradiction between film quality and substrate temperature constraints

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses composite target materials consisting of indium oxide combined with specific metal elements (Ti, Zr, Hf, Nb, Ta, or Mo). This composite material approach allows the system to achieve the electrical and optical properties of high-temperature processed films while maintaining compatibility with low-heat-resistant substrates like plastics

Inventive Principle:
Principle #40Composite materials

2Reliability

If oxygen content in the target is reduced (through sintering in vacuo or reducing atmosphere) to introduce oxygen vacancies and improve conductivity, then electrical resistance is lowered, but target manufacturing complexity and sintering control difficulty increase

Engineering Contradiction:
Improveelectrical conductivityVSAvoidsintering process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention modifies the target composition by adding specific metal elements (Ti, Zr, Hf, Nb, Ta, or Mo) at optimized concentrations. These elements inherently facilitate oxygen vacancy formation and improve conductivity without requiring complex sintering processes in vacuo or reducing atmospheres, thus achieving low electrical resistance while simplifying the manufacturing process

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses relatively simple sintering conditions (air atmosphere at conventional temperatures) to produce targets with the desired properties, avoiding the need for expensive and complex vacuum or reducing atmosphere sintering equipment, thereby reducing manufacturing complexity

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the production of In2O3-based transparent conductive films with low electrical resistance and high transmittance at room temperature, suitable for various substrates including plastics, with stable oxygen vacancies acting as conductive carriers, and maintains reproducibility even after extended sputtering times.

Implementation Method 1

These transparent conductive films can be formed as a thin film with low electrical resistance on a substrate by a sputtering process using, for example, a sputtering target having titanium added to ITO as a raw material

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

In more detail, the present invention relates to a sputtering composite target which is suitably used for manufacturing an indium oxide (In2O3) based transparent conductive film with low electrical resistance and good conductivity

Methodology Applied
Scientific EffectOxygen vacancies:

Data Source

PatentUS8338002B2Sputtering composite target, method for manufacuturing transparent conductive film using the same and transparent conductive film-provided base material
Publication Date: 2012.12.25 DEXERIALS CORP
  • US8338002B2 patent drawing
  • US8338002B2 patent drawing
  • US8338002B2 patent drawing

AI summary

A sputtering composite target includes: an oxide based component containing indium oxide; and a carbon based component.