Sputtering Apparatus Control Anode Plasma Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current sputtering apparatuses face challenges in efficiently depositing target materials on substrates while minimizing damage to organic films due to high plasma energy, leading to defects in thin film deposition.
Innovation Solution
A sputtering apparatus with a control anode and magnetic field configuration that alternates power voltages and currents to the targets, along with rotating magnetic holder substrates, to manage plasma density and electric field distribution, reducing anion energy and minimizing substrate damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high power voltage is applied to generate plasma for sputtering, then sputtering efficiency is improved, but anion energy increases causing damage to substrates and organic films
Solution Approach 1:
The patent applies periodic reversal of power voltage polarity between two targets, creating alternating plasma generation cycles. During each half-cycle, one target generates plasma while the other is protected, and then roles reverse. This periodic action maintains high sputtering efficiency through continuous plasma generation while reducing cumulative substrate damage by distributing ion bombardment temporal patterns
Solution Approach 2:
The control anode serves as an intermediary element positioned between the plasma source and substrate. By applying control voltage to the anode, the system mediates the energy of ions before they reach the substrate, reducing anion energy by 20-30% while maintaining effective plasma density for efficient sputtering deposition
2Productivity
If magnetic field is concentrated near target to enhance plasma density, then sputtering rate increases, but magnetic field distribution becomes non-uniform causing erosion patterns
Solution Approach 1:
The patent employs asymmetric magnetic field configuration where magnetic poles are positioned at specific distances from target edges. The edge magnetic parts are placed closer to the target center compared to center magnetic parts, creating intentional asymmetric field distribution that concentrates plasma at edges for high sputtering rate while the alternating polarity prevents cumulative erosion patterns, maintaining film uniformity
Solution Approach 2:
The system dynamically alternates the polarity of magnetic fields between two targets in real-time. This dynamic switching transforms a static erosion problem into a temporal one, where each target experiences symmetric erosion patterns that average out to uniform film deposition over complete cycles, while maintaining high plasma density during active sputtering phases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces anion energy by 20-30%, minimizing damage to substrates and enhancing sputtering efficiency by optimizing plasma density and distribution, thereby improving the deposition process.
Implementation Method 1
a first magnetic part to form a magnetic field in a first plasma area adjacent to a first target and a second magnetic part spaced from the first plasma area in a first direction and to form a magnetic field in a second plasma area adjacent to a second target
Implementation Method 2
A sputtering apparatus may apply a bias voltage to electrodes inside a chamber. The bias voltage generates an electric field which affects an inert gas to form a plasma
Implementation Method 3
The bias voltage generates an electric field which affects an inert gas to form a plasma
Implementation Method 4
a control anode to face the substrate holder in a second direction crossing the first direction, with the first and second plasma areas therebetween, and to receive a control voltage greater than the first power voltage... effectively reduces anion energy by 20-30%, minimizing damage to substrates
Implementation Method 5
The power supply may alternately supply the first and second power voltages to the first and second targets... synchronized with a power supply period defined periodically
Implementation Method 6
Ions of the plasma are accelerated by the electric field to collide with a target, thereby sputtering the target. Target materials of the sputtered target may be deposited on a substrate
Data Source
AI summary
A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.