Sputtering System Using Etch Time Feedback for Thin Film Thickness
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Solution Overview
Problem
Existing sputtering methods face challenges in uniformly maintaining the thickness of thin films across substrates due to difficulties in accurately controlling the deposition process, particularly in ensuring consistent film thickness during the sputtering of semiconductor integrated circuits.
Innovation Solution
A sputtering system and method that utilize etch time information from an end point detection device to calculate and control the deposition time for subsequent substrates, ensuring uniform thin film thickness by adjusting process variables such as power, gas introduction, and vacuum pressure based on etch time data from previously sputtered substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition time is controlled based on fixed process parameters, then the sputtering process is simple to operate, but the thin film thickness cannot be uniformly maintained across substrates
Solution Approach 1:
The system uses etch time information from the dry etching process as feedback to calculate and adjust the deposition time for subsequent sputtering processes. The controller receives etch time data, calculates the required deposition time based on this feedback, and adjusts the sputtering process accordingly to maintain uniform thin film thickness across substrates.
Solution Approach 2:
The sputtering system automatically adjusts its deposition time using etch time information from the preceding dry etching process on the same substrate. This self-service mechanism eliminates the need for separate thickness measurement and manual adjustment steps, as the system uses the substrate's own etch process data to control subsequent deposition.
2Manufacturing precision
If etch time information is used to calculate deposition time, then thin film thickness uniformity is improved, but the process requires integration between dry etching and sputtering systems
Solution Approach 1:
The controller is designed to perform multiple functions: it controls both the dry etching process and the subsequent sputtering process, and it calculates deposition time based on etch time information. This multi-functional controller integrates two previously separate processes (etching and sputtering) into a unified system that automatically adjusts parameters to maintain thickness consistency.
3Manufacturing precision
If deposition time is precisely controlled using etch time feedback, then thin film quality is enhanced, but the processing time increases due to calculation and adjustment steps
Solution Approach 1:
The system performs the deposition process immediately after the dry etching process on the same substrate, using the etch time information as it becomes available. This preliminary action approach eliminates the need for separate measurement, calculation, and adjustment steps that would otherwise be required, thereby maintaining thin film quality while minimizing additional processing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for precise control of deposition time, resulting in uniformly maintained thin film thickness across substrates, enhancing the consistency and quality of thin film deposition in semiconductor manufacturing.
Implementation Method 1
power is applied, the sputtering gas (Ar) introduced into the chamber impacts electrons emitted from the cathode such that exited Ar+ is formed
Implementation Method 2
The exited gas (Ar+) is drawn to the side of the target as the cathode and impacts the target. The energy of the exited gas is spread to the target because of the collision
Implementation Method 3
The generated plasma emerges by a mean free path and is attached to the substrate positioned within the mean free path, thereby forming the thin film
Implementation Method 4
a sputtering method is a method used for forming a thin film on a substrate surface
Data Source
AI summary
A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.