Reactive Sputtering Gas Distribution Tubes for Uniform Film Composition
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Solution Overview
Problem
Existing sputtering apparatuses face challenges in uniformly distributing reactive gas across large area sputtering targets, leading to non-uniform film composition and contamination issues due to gas introduction tubes that are difficult to remove without disassembling the chamber.
Innovation Solution
The use of parallel gas introduction tubes with inner and outer tubes having multiple openings, positioned between the sputtering target and substrate, ensures uniform gas distribution and easy removal without disassembling the chamber, utilizing a configuration that maintains pressure and quickly reduces it at shutdown to prevent post-process gas dispersion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas introduction tubes are used to provide reactive gas to large area sputtering targets, then gas distribution uniformity is improved, but tube removal complexity increases
Solution Approach 1:
The gas introduction tube is divided into multiple separate sections (first section, second section, third section) that can be independently removed. The first section connects to the gas source, the second section extends across the processing area, and the third section connects to the vacuum system. This segmentation allows the tube to be disassembled and removed without disassembling the entire chamber, resolving the contradiction between achieving uniform gas distribution and enabling easy tube removal.
2Device complexity
If gas is introduced through peripheral inlet only, then device complexity is reduced, but gas distribution uniformity deteriorates
Solution Approach 1:
The gas introduction system transitions from a single peripheral inlet (one-dimensional point source) to a multi-section tube system that distributes gas across the processing area (two-dimensional distribution). The tube extends from the periphery across the processing area to the opposite side, creating multiple gas introduction points that improve uniformity without significantly increasing overall system complexity.
3Manufacturing precision
If gas pressure is maintained high in introduction tubes, then gas flow uniformity through outlets is improved, but post-process gas dispersion increases
Solution Approach 1:
The gas pressure in the introduction tube is made dynamic rather than static. During the sputtering process, high pressure is maintained to ensure uniform gas flow through the outlets. When the process stops, the pressure is quickly reduced, preventing continued gas flow and dispersion into the chamber. This dynamic pressure control resolves the contradiction between maintaining uniform gas flow during operation and preventing harmful post-process gas dispersion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform film composition across large area substrates and reduces downtime by allowing easy replacement of gas introduction tubes without disassembling the chamber, minimizing contamination and maintaining process efficiency.
Implementation Method 1
a plurality of parallel gas introduction tubes. The gas introduction tubes extend across the vacuum chamber in an area between the target and the substrate support
Implementation Method 2
a sputtering target, a substrate support
Data Source
AI summary
A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.