Sputtering Gas Introduction Segmentation for Plasma Stability
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Solution Overview
Problem
Conventional sputtering apparatuses face issues with high gas consumption and pressure fluctuations, leading to reduced productivity and quality reproducibility, especially during maintenance and plasma ignition.
Innovation Solution
A sputtering method involving a first gas introduction step within the sputtering space and a second gas introduction step from outside the space, combined with voltage application to the target, to maintain uniform pressure and facilitate reproducible plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If process gas is introduced from the exterior of the deposition shield plate (external gas introduction), then the gas can be supplied to the chamber, but a large amount of gas is required to achieve the necessary pressure near the target, causing frequent cryopump actuation and reduced productivity
Solution Approach 1:
The gas introduction system is segmented into two separate introduction ports: one for introducing process gas into the sputtering space (internal) and another for introducing gas into the chamber exterior (external). This segmentation allows independent control of gas flow to different regions, enabling efficient plasma ignition with reduced overall gas consumption and frequency of pump actuation.
Solution Approach 2:
Process gas is preliminarily introduced into the sputtering space through the first gas introduction port before plasma ignition begins. This preliminary action ensures that the necessary gas pressure and density are established in the plasma generation region, enabling reliable plasma ignition without requiring large amounts of gas to be supplied from the chamber exterior.
2Loss of time
If process gas is introduced from the exterior of the deposition shield plate, then gas supply is possible, but it takes significant time for the gas to spread to the interior space, causing pressure fluctuations during plasma ignition
Solution Approach 1:
The gas introduction system is divided into two independent paths: direct internal introduction into the sputtering space and external introduction into the chamber. This segmentation eliminates the time delay associated with gas diffusion from exterior to interior, as the first port provides direct gas supply to the plasma region, ensuring immediate pressure stabilization during plasma ignition.
Solution Approach 2:
The first gas introduction port performs preliminary action by establishing the necessary gas pressure and density in the sputtering space before plasma ignition begins. This preliminary gas introduction ensures that when plasma ignition occurs, the pressure remains stable and predictable, eliminating fluctuations that would otherwise occur during the gas spreading process.
3Quantity of substance
If a large amount of process gas is supplied to achieve plasma ignition pressure, then plasma can be ignited, but the cost of raw materials increases
Solution Approach 1:
The gas supply system is segmented into two independent introduction ports that can be controlled separately. The first port supplies gas directly to the sputtering space where plasma ignition occurs, while the second port supplies gas to the chamber exterior. This segmentation allows precise control of gas flow to only the necessary regions, minimizing overall gas consumption and reducing raw material costs.
Solution Approach 2:
Gas is introduced locally at the precise location where it is needed for plasma ignition through the first gas introduction port. This local quality approach ensures that process gas is supplied directly to the plasma generation region rather than relying on diffusion from the chamber exterior, significantly reducing the total amount of gas required and thereby reducing raw material costs.
4Ease of repair
If shield replacement maintenance is performed, then the shield can be renewed, but the pressure in the plasma space changes, making it impossible to obtain given process reproducibility and film quality
Solution Approach 1:
The gas introduction system is segmented into two independent ports, allowing the first port to maintain stable gas supply to the sputtering space during and after shield replacement. This segmentation enables quick reconfiguration of gas flow paths following maintenance, minimizing pressure changes and maintaining process reproducibility and film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient plasma discharge and stable pressure in the plasma space, enhancing productivity and quality reproducibility even during maintenance and shield replacement.
Implementation Method 1
a sputtering apparatus which generates a plasma discharge in a vacuum to deposit a thin film on a substrate
Implementation Method 2
generates a plasma discharge in a vacuum to deposit a thin film
Data Source
AI summary
This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.