Sputtering Apparatus Gas Supply Ports for Film Uniformity
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Solution Overview
Problem
In sputtering apparatuses, the non-uniform distribution of inert gas leads to variations in plasma concentration, resulting in regions where plasma is not generated, affecting the uniformity and properties of the film deposited on substrates, especially as substrate size increases.
Innovation Solution
A sputtering apparatus with a cathode plate featuring multiple gas supply ports between target sections ensures uniform inert gas distribution between the cathode and anode plates, enhancing the uniformity of the film deposited on substrates by supplying inert gas through these ports.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single inert gas supply port is provided below the chamber, then the device complexity is reduced, but the uniformity of inert gas distribution and plasma generation deteriorates
Solution Approach 1:
The single inert gas supply port below the chamber is segmented into multiple gas supply ports distributed across the cathode plate. This segmentation allows inert gas to be supplied from multiple locations simultaneously, ensuring uniform gas distribution and plasma generation across the entire substrate area, thereby resolving the contradiction between simple structure and film uniformity
Solution Approach 2:
The gas supply approach transitions from a single-point supply (below the chamber) to a distributed multi-point supply (across the cathode plate surface). This dimensional change in gas supply configuration enables uniform inert gas distribution without significantly increasing structural complexity
2Productivity
If the substrate size is increased, then the productivity is improved, but the plasma generation uniformity deteriorates due to non-uniform inert gas distribution
Solution Approach 1:
The cathode plate is equipped with multiple gas supply ports that segment the gas supply function across different regions. This allows large substrates to receive uniform inert gas distribution even as substrate area increases, maintaining plasma generation uniformity while scaling up productivity
Solution Approach 2:
Each region of the cathode plate has its own gas supply port, providing local gas supply tailored to each area's needs. This local quality approach ensures that even in large substrate configurations, each local region receives adequate inert gas for uniform plasma generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The uniform distribution of inert gas via multiple gas supply ports between target sections improves the consistency and properties of the film deposited on substrates, addressing the issue of non-uniform plasma generation and material composition.
Implementation Method 1
When a direct current power is applied to the cathode and the anode while generating a high frequency, electrons are emitted from a target of the target unit by an electric field and accelerated toward the anode
Implementation Method 2
the accelerated electrons collide with inert gas supplied into the chamber, thereby ionizing the gas
Implementation Method 3
The plasma is maintained as far as the outer electric potential is maintained and the electrons are continuously generated
Implementation Method 4
Cations of the inert gas collide with the target connected to the cathode by the electric field to realize the sputtering phenomenon by which the atoms are separated from the surface of the target
Implementation Method 5
the electrons emitted from the target and accelerated toward the anode collide with neutral atoms to be excited and generate plasma
Implementation Method 6
The magnet 18 forms a magnetic field to prevent electrons generated from plasma from straying off from a desired region
Implementation Method 7
The separated target atoms are deposited on the substrate to form the thin film on the substrate
Data Source
AI summary
A sputtering apparatus comprises a substrate unit that includes a substrate on which a target material is deposited in a chamber and a target unit on which a plurality of target sections formed of the target material are arranged. The sputtering apparatus further comprises a cathode plate that supplies electric power to surfaces of the plurality of target sections and a plurality of gas supply ports provided on regions between the plurality of target sections.