Sputtering Chamber Liner Cooling to Reduce Aluminum Whisker Defects
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Solution Overview
Problem
In semiconductor manufacturing, the rapid temperature rise and heat radiation during sputtering processes in sputtering reaction chambers can lead to whisker defects in aluminum thin films due to inefficient heat dissipation and gas/impurity release, affecting product yield.
Innovation Solution
A sputtering reaction chamber process assembly with a shield and cover ring member integrally formed, featuring a cooling channel that cools both the cover ring and body members, reducing heat radiation and impurity release, and incorporating a labyrinth channel for enhanced heat exchange.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sputtering time increases to complete deposition, then film thickness is achieved, but temperature of members increases and causes whisker defects
Solution Approach 1:
Cooling channels are pre-installed within the shield and cover ring structure before the sputtering process begins. This preliminary preparation of the cooling system ensures that temperature control is active from the start of deposition, preventing temperature-related whisker defects while allowing the full deposition time needed for proper film thickness.
Solution Approach 2:
The cooling system operates continuously throughout the entire sputtering deposition process, maintaining constant temperature control of the shield and cover ring. This continuous cooling action prevents temperature fluctuations that would cause whisker defects, allowing the deposition to proceed for the necessary duration to achieve proper film thickness without reliability issues.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces whisker defects and improves product yield by enhancing cooling efficiency and maintaining a stable process environment, while simplifying assembly and disassembly.
Implementation Method 1
A cooling channel is arranged in the cover ring member and the body member and configured to cool the cover ring member and the body member by transferring coolant
Implementation Method 2
as argon ions (Ar+) in a plasma continuously bombard the target, a large amount of heat may be generated in the process chamber
Implementation Method 3
as argon ions (Ar+) in a plasma continuously bombard the target
Implementation Method 4
The aluminum pad is generally prepared by a physical vapor deposition (PVD) method
Data Source
AI summary
The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a liner, and the liner includes an integrally formed body member and a cover member. The cover member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover member and the body member and may be configured to cool the cover member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.