Sputtering Magnet Array Control for Uniform Target Erosion
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Solution Overview
Problem
In semiconductor device production, physical vapor deposition processes face challenges in achieving uniformity of thin film deposition and extending the target change interval due to uneven erosion and consumption of target material, leading to premature target replacement and increased maintenance needs.
Innovation Solution
A deposition system with tiltable and rotatable magnet members is used to adjust the magnetic field direction and intensity, focusing more ion bombardment on specific target areas to enhance material deposition uniformity and extend target life by optimizing the ion bombardment pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering with fixed magnet configuration is used, then the deposition process is simple, but the thin film uniformity deteriorates due to uneven target erosion
Solution Approach 1:
The magnet system is divided into multiple independent magnet members (e.g., first magnet member, second magnet member, third magnet member) positioned at different locations around the target. Each magnet member can be independently adjusted in orientation and position, allowing localized control of ion bombardment patterns to achieve uniform thin film deposition across the target surface.
Solution Approach 2:
The magnet members are made tiltable and rotatable, transforming the static magnetic field configuration into a dynamic one. This allows the magnetic field direction and intensity to be adjusted during the deposition process, enabling optimization of ion bombardment distribution to improve thin film uniformity while extending target life.
2Duration of action of stationary object
If conventional sputtering with fixed magnet configuration is used, then the device structure is simple, but the target change interval deteriorates due to uneven erosion
Solution Approach 1:
The magnet system is divided into multiple independent magnet members (e.g., first magnet member, second magnet member, third magnet member) positioned at different locations around the target. Each magnet member can be independently adjusted in orientation and position, allowing localized control of ion bombardment patterns to achieve uniform thin film deposition across the target surface.
Solution Approach 2:
The magnet members are made tiltable and rotatable, transforming the static magnetic field configuration into a dynamic one. This allows the magnetic field direction and intensity to be adjusted during the deposition process, enabling optimization of ion bombardment distribution to improve thin film uniformity while extending target life.
3Productivity
If magnets are configured behind and around the target to attract more ions, then the deposition rate increases, but the target erosion becomes more uneven
Solution Approach 1:
Different magnet members are configured with different orientations and positions to create localized variations in magnetic field strength and direction. For example, magnet members positioned at different angular locations around the target can be adjusted independently to control ion bombardment intensity in specific regions, achieving both high deposition rates and uniform target erosion.
Solution Approach 2:
The magnet members are made tiltable and rotatable, transforming the static magnetic field configuration into a dynamic one. This allows the magnetic field direction and intensity to be adjusted during the deposition process, enabling optimization of ion bombardment distribution to improve thin film uniformity while extending target life.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in more uniform thin film deposition and extends the interval between target changes, reducing costs and maintenance by utilizing target material more efficiently and improving process chamber maintenance intervals.
Implementation Method 1
The sputtering may employ magnets configured behind and around the target to attract more positively charged ions by trapping electrons near the surface of the target
Implementation Method 2
When the positively charged argon ions strike the target surface, the momentum of the positively charged argon ions transfers to the target material to dislodge one or more atoms which eventually deposit on the substrate
Implementation Method 3
sputtering, a form of the PVD, is commonly used in the semiconductor fabrication process to deposit complex alloys and metals
Implementation Method 4
When the argon gas is introduced into the chamber, a plurality of collisions occurs with electrons released from the cathode. That causes the argon gas to lose its outer electrons and become positively charged argon ions
Data Source
AI summary
A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.