Multi-Target Sputtering Magnet Motion for Stable Plasma Deposition
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Solution Overview
Problem
Existing film forming apparatuses with multiple targets face challenges in achieving precise film formation due to interactions between the magnetic fields of adjacent targets, leading to impurities and unstable plasma discharge.
Innovation Solution
A film forming method involving synchronized reciprocating and separating operations of magnets at selected and unselected targets, where magnets at selected targets move closer to the target surface while those at unselected targets are separated, maintaining controlled magnetic fields and stabilizing plasma discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If magnets are disposed at multiple targets simultaneously, then film formation can be performed on multiple targets, but magnetic field interactions between adjacent targets cause impurities and unstable plasma discharge
Solution Approach 1:
The magnet positions are made dynamic rather than fixed. During sputtering, the magnet at the selected target is positioned close to the target surface to generate strong magnetic field for plasma induction, while magnets at unselected targets are positioned away from their targets to avoid harmful magnetic field interactions. This dynamic positioning resolves the contradiction by allowing multi-target capability while maintaining plasma stability through selective magnet activation.
Solution Approach 2:
The magnetic field generation is segmented into selected and unselected targets. The system divides the multi-target environment into active (selected) and inactive (unselected) zones by independently controlling magnet positions at each target, allowing film formation on multiple targets without simultaneous magnetic field interference.
2Adaptability or versatility
If magnets at unselected targets remain close to target surfaces, then magnetic field is available for potential future use, but magnetic field interactions generate impurities during sputtering
Solution Approach 1:
Magnet positions are dynamically adjusted based on target selection status. When a target is unselected, its magnet is positioned away from the target surface to eliminate impurity generation. When the target becomes selected, the magnet moves close to the surface. This dynamic adaptation maintains versatility for target switching while eliminating harmful magnetic field interactions during active sputtering.
Solution Approach 2:
The system takes preliminary action by positioning magnets away from unselected targets before sputtering begins, preventing magnetic field interactions and impurity generation in advance. This preemptive positioning ensures that when sputtering commences, only the selected target has an active magnet close to its surface, eliminating the source of impurities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances film formation precision by reducing impurities and stabilizing plasma discharge, thereby improving the accuracy of film deposition on substrates.
Implementation Method 1
The film forming apparatus induces plasma to the vicinity of the targets using magnetic field of the magnets during the sputtering
Implementation Method 2
a material of a target in a processing chamber is emitted to a substrate by collision between the target and positive ions in plasma
Data Source
AI summary
There is provided a film forming method for a film forming apparatus which includes: a processing chamber; a plurality of sputtering targets disposed in the processing chamber; and a plurality of magnets respectively disposed at the plurality of targets. The film forming method comprises: during a sputtering process in which a selected target selected among the plurality of targets is subjected to sputtering, performing a selected-side reciprocating operation in which the magnet disposed at the selected target reciprocates in parallel to an extension direction of the selected target; and at the same time, performing at least one of an unselected-side reciprocating operation in which the magnet disposed at an unselected target that is not subjected to the sputtering among the plurality of targets reciprocates in parallel to an extension direction of the unselected target, and a separating operation in which the magnet is separated from the unselected target.