Sputtering Magnet Unit Tilting for Film Thickness Uniformity

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Solution Overview

Problem

Sputtering apparatuses using sintered targets face challenges in achieving uniform film thickness distribution due to local variations in target density, leading to uneven sputtering rates and film thickness.

Innovation Solution

A sputtering apparatus with a magnet unit and rotary shaft system that tilts relative to the center line to adjust the distance between magnets and the target surface based on density distribution, ensuring a uniform leakage magnetic field and improved film thickness uniformity by varying the magnetic field intensity across the target surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a sintered target is used in a sputtering apparatus, then the target can be manufactured with good mechanical properties, but local density variations in the target cause non-uniform sputtering rates and poor film thickness distribution

Engineering Contradiction:
Improvemechanical properties of targetVSAvoidfilm thickness distribution
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent applies local quality by varying the distance between the magnet unit and target surface at different locations to compensate for local density variations. Specifically, the distance is made shorter in low-density regions and longer in high-density regions, creating location-specific magnetic field intensities that equalize the sputtering rate across the entire target surface, thereby achieving uniform film thickness distribution while maintaining the mechanical properties of the sintered target

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the magnet unit rotatable around the target, allowing the local distance adjustments to be dynamically applied as the magnet unit moves. This rotational capability enables the system to adaptively compensate for density variations throughout the sputtering process, maintaining uniform sputtering conditions despite the static density distribution in the sintered target

Inventive Principle:
Principle #15Dynamics

2Productivity

If the magnet unit is positioned closer to the target to increase sputtering rate, then productivity improves, but the magnetic field intensity becomes too strong in high-density regions causing non-uniform sputtering

Engineering Contradiction:
Improvesputtering rateVSAvoidfilm thickness uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by positioning the magnet unit at different distances from the target at different locations. In low-density regions, the magnet unit is positioned closer to increase the sputtering rate, while in high-density regions, it is positioned farther away to prevent excessive magnetic field intensity. This location-specific positioning strategy enables the system to maintain high overall productivity while achieving uniform film thickness distribution across the target surface

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively enhances the uniformity of film thickness distribution on the substrate by compensating for local density variations in the sintered target, improving the overall sputtering process and film quality.

Implementation Method 1

a sputtering apparatus which comprises: a vacuum chamber having a target manufactured by sintering raw material powder; provided that such a surface of the target as is eroded by sputtering is defined as a sputtering surface

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 2

a magnet unit having a plurality of magnets disposed on the same surface above the target in order to cause leakage magnetic field penetrating the target to function in uneven distribution on the sputtering surface

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Data Source

PatentUS11056323B2Sputtering apparatus and method of forming film
Publication Date: 2021.07.06 ULVAC INC
  • US11056323B2 patent drawing
  • US11056323B2 patent drawing
  • US11056323B2 patent drawing

AI summary

A sputtering apparatus is provided with: a vacuum chamber having a target manufactured by sintering raw material powder; a magnet unit having a plurality of magnets disposed on the same surface above the target which is mounted on the vacuum chamber in a non-rotatable manner, in order to cause leakage magnetic field penetrating the target to function in uneven distribution on the sputtering surface; a rotary shaft which is disposed on the center line passing through the center of the target and is coupled to the magnet unit; and a drive motor for driving the rotary shaft to rotate, thereby rotating the magnet unit such that a function region of the leakage magnetic field on the sputtering surface revolves about an imaginary circle with the center of the target serving as the center.