Sputtering Chamber Magnetic Column Layout for Uniform Film Deposition
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Solution Overview
Problem
The existing physical vapor deposition (PVD) processes face challenges in producing a uniform magnetic field, leading to non-uniform target erosion and film deposition on semiconductor substrates.
Innovation Solution
The implementation of a magnetic assembly with a specific arrangement of magnetic columns, allowing for adjustments in the position of these columns to achieve a more uniform magnetic flux distribution, thereby optimizing the deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional magnetic assembly is used in the PVD process, then the deposition process can be performed, but the magnetic field is non-uniform leading to non-uniform target erosion and film deposition
Solution Approach 1:
The magnetic assembly is divided into multiple discrete magnetic columns arranged in a specific pattern. Each magnetic column can be independently positioned and adjusted, allowing the magnetic field to be segmented into controllable zones that can be optimized for uniformity across the target surface.
Solution Approach 2:
The magnetic columns are designed to be movable along the target surface, allowing dynamic adjustment of their positions. This enables the magnetic field distribution to be optimized for different deposition scenarios and maintains uniformity as the target erodes over time.
2Productivity
If the magnetic field is intensified to increase deposition rate, then productivity improves, but target erosion becomes more non-uniform
Solution Approach 1:
Different regions of the target surface are subjected to different magnetic field strengths by positioning magnetic columns at specific locations. This creates locally optimized magnetic fields that maintain uniform erosion across the entire target while allowing high deposition rates in specific zones.
Solution Approach 2:
The system monitors deposition uniformity and target erosion patterns, and uses this feedback to adjust the positions of the magnetic columns. This closed-loop control maintains optimal magnetic field distribution even as the target erodes and deposition conditions change.
3Manufacturing precision
If magnetic columns are added to improve magnetic field uniformity, then film uniformity improves, but device complexity increases
Solution Approach 1:
Each magnetic column serves multiple functions: it generates the magnetic field for plasma confinement, controls local deposition rate, and its position can be adjusted to compensate for target erosion. This multi-functionality reduces the need for additional components while maintaining film uniformity.
Solution Approach 2:
Instead of adding more magnetic columns in a single plane, the system utilizes the third dimension by allowing magnetic columns to move vertically along the target surface. This dimensional approach provides additional degrees of freedom for optimizing magnetic field distribution without increasing the number of columns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more uniform film thickness and resistivity across the semiconductor substrate, along with more even target material erosion, enhancing the overall efficiency and quality of the PVD process.
Implementation Method 1
The semiconductor processing chamber includes a magnetic assembly including a plurality of magnetic columns positioned on the semiconductor processing chamber
Implementation Method 2
Physical vapor deposition (PVD), or sputtering, is a process used in the fabrication of electronic devices. PVD is a plasma process performed in a vacuum chamber where a negatively biased target is exposed to a plasma of an inert gas
Implementation Method 3
PVD is a plasma process performed in a vacuum chamber where a negatively biased target is exposed to a plasma of an inert gas having relatively heavy atoms
Data Source
AI summary
Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.